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RISDiscretization Method of Hydrodynamic Equations for Simulation of GaN MESFETs
DISCRETIZION METHOD OF HYDRODYNAMIC EQUATIONS FOR SIMULATION OF GaN MESFETs
A finite discretization method in two dimensions has been developed and used to model electron transport in wurtzite phase GaN MESFETs.
A Shock-Capturing Upwind Discretization Method for Characterization of SiC MESFETs
to describe inertia effects which play an increasing role in
different fields of micro- and optoelectronics where simplified charge transport models
like the drift-diffusion model and the energy balance model are no longer applicable...
Modeling SOI-MOSFET Using Neuro Space Mapping
The drift-diffusion (DD) model is not accurate for simulation of sub-micrometer
semiconductor devices. Using RBF NN, a neuro space mapping is proposed to DD model parameters. The DD model with mapped parameters can produce accurate simulation...
Modeling Semiconductor Device by Using Neuro Space Mapping
In this paper a new method for modeling semiconductor devices by use of the drift-diffusion (DD) model and neural networks is presented. Unlike the hydrodynamic (HD) model which is complicated, time consuming with high processing cost, the proposed...