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RISThree-Valley Model For The Study Of Electron Transport Properties At Very High Electric Field In Bulk GaSb, Ga0.5Sb0.5As and GaAs Materials
Year: 2011
Abstract:
. It is
found that GaSb exhibits an extremely low peak drift velocity at
room temperature 0.25×105 ms-1, at a doping concentration of
1017 cm-3 in comparison to GaAs. All dominant scattering
mechanisms in the structure...
A recursive partitioning algorithm for space information flow
Publisher: IEEE
Year: 2014
A scalable and flexible packet forwarding method for Future Internet networks
Publisher: IEEE
Year: 2014
DC and RF characteristics of SiC MESFETs with different channel doping concentrations under the gate
Year: 2011
Abstract:
(NDS) channel doping levels are studied in details. Simulation results illustrate that a larger NSS compared to NDS improves the breakdown voltage. On the other hand, decreasing NSS, reduces the gate-source capacitance. A larger channel doping...
Adaptive Threshold and Principal Component Analysis for Features Extraction of Electrocardiogram Signals
Publisher: IEEE
Year: 2014
A 600µA 32 kHz input 960 MHz output CP-PLL with 530ps integrated jitter in 28nm FD-SOI process
Publisher: IEEE
Year: 2014
Organizing Committee
Publisher: IEEE
Year: 2014
Opportunistic High Energy Physics Computing in User Space with Parrot
Publisher: IEEE
Year: 2014
Green's function asymptotic in periodic medium
Publisher: IEEE
Year: 2014