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RISIMPROVED PERFORMANCE OF 4H-SIC MESFETS USING MIDDLE RECESSED STRUCTURE WITH DUAL CHANNEL LAYER
Year: 2011
Abstract:
A middle-recessed 4H-SiC metal semiconductor field effect transistors (MESFETs) with dual-channel layer was proposed and its electrical performances were studied by numerical device modeling. The higher doped lower-channel layer serves to increase...
Sputtered Deposited Carbon–Indium–Zinc Oxide Channel Layers for Use in Thin-Film Transistors
Publisher: IEEE
Year: 2014
HConfig: Resource adaptive fast bulk loading in HBase
Publisher: IEEE
Year: 2014
Classical Conditioning Mimicked in Junctionless IZO Electric-Double-Layer Thin-Film Transistors
Publisher: IEEE
Year: 2014
Energy-Aware Data Transfer Tuning
Publisher: IEEE
Year: 2014
A new approach to the use of parametric method of robot motion planning
Publisher: IEEE
Year: 2014
An improved optimization method of measurement matrix for compressed sensing
Publisher: IEEE
Year: 2014
High-frequency performance of AlGaN channel HEMTs with high breakdown voltage
Publisher: IET
Year: 2014