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The Effect of Gate Length on SOI-MOSFETs Based on ZnO Material
fixed channel length, when the gate length is increased, the
output drain current characteristics is decreased and
therefore the transistor transconductance decreases.
Moreover, with increasing the gate length, the effect of the...
The Effect of Gate Length and Temperature on ZnO MOSFETs Operation
is decreased, the output drain current is increased, and therefore the
transistor transconductance increases. Moreover, with increasing temperature the drain current is
reduced, which results in the reduced drain barrier lowering. The simulated...
The Effect of Gate Length on SOI-MOSFETs Operation
nm are simulated. Simulations show that with a
fixed channel length, when the gate length is increased, the output drain current characteristics
slope is increased, and therefore the transistor transconductance increases. Moreover, with...
Holographic-type four-port optical circulator with a small-aperture Faraday rotator window
Predictive Analytics for Outpatient Appointments
On the catalyzing effect of randomness on the per-flow throughput in wireless networks
Experimental validation of adverse weather effects on a 240 GHz multi-gigabit wireless link
A Study of Gate Length and Source-Drain Bias on Electron Transport Properties in SiC Based MOSFETs Using Monte Carlo Method
the gate length is
decreased, the output drain current is increased, and therefore the transistor transconductance increases. Moreover, with
increasing temperature the drain current is reduced, which results in the reduced drain barrier...
A Programmable Ultra Low Power Analog Band-Pass Filter for Cochlear Implants
Inthis article an ultra low power analog programmable band-pass filter for cochlear implants (CIs) is designed. In order to decreasethe power consumption, a subthresholdGm-Cstructure is used and also capacitiveattenuationtechnique ...
The frequency Response and Effect of Trap parameters on The characteristics of GaN MESFETs
of modulating the gate bias have also been studied to
test the device respond and derive the frequency bandwidth. The maximum cut-off frequency
and transconductance of a 0.3 μm gate-length GaN MESFET including trapping
effects are calculated...