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RISیک BJT جانبی لایه نازک با بهره بالا بر روی زیرپایه SOI
در این مقاله یک ساختار BJT جانبی دو امیتری متقارن (SDE LBJT) روی زیرپایه SOI طراحی و بررسی شده است. از توزیع ناخالصی مناسب جهت بهبود کارآیی ترانزیستور استفاده شده است. شبیه سازی ها نشان می دهد که ترانزیستور خصوصیات DC خوبی دارد. همچنین بهره جریان...
Two-Dimensional Analytical Modeling of Fully Depleted Short-Channel Dual-Gate Silico-on-Insulator Metal Oxide Semiconductor Field Effect Transistor
In this paper, a two-dimensional (2D) analytical model of the surface potential variation along the channel in a fully depleted dual-gate (DG) silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) is proposed...
The Effects of Random Distribution Fluctuations of Dopants on SOI-MOSFET Performance
In this paper the effects of random distribution fluctuations of dopants in the channel of a nano-scale SOI-MOSFET are investigated via simulations.
Simulations are performed using energy balance model. According to obtained results...
The Effect of Gate Length on SOI-MOSFETs Operation
The effect of gate length on the operation of silicon-on-insulator (SOI) MOSFET structure with a
layer of buried silicon oxide added to isolate the device body has been simulated. Three
transistors with gate lengths of 100, 200 and 500...