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ساخت کاتالیست Cu-ZnO-Al2O3 ارزیابی فعالیت آن در واکنش جابجایی آب-گاز دما پایین

Type: Conference Paper

Author : رفیعی, منصوره; خندان, ناهید; خراشه, فرهاد

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تأثیر نوع سوخت در سنتز احتراقی نانو کاتالیست CuO-ZnO-Al2O3/HZSM-5 جهت استفاده در تبدیل یک مرحله ای گاز سنتز به دی متیل تر به عنوان سوخت سبز

Type: Conference Paper

Author : رضا, خوش بین; محمد, حقیقی

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Effect of the Vertical Transportation Component of the TCO Layer on the Electrical Properties of Silicon Heterojunction Solar Cells

Type: Journal Paper

Author : Ghahfarokhi, Omid Madani; Rajanna, Pramod Mulbagal; Sergeev, Oleg; von Maydell, Karsten; Agert, Carsten

Publisher: IEEE

Year: 2014

FDCCII-based P, PI, PD and PID controllers

Type: Conference Paper

Author : Kumngern, M. , Torteanchai, U.

Publisher: IEEE

Year: 2014

Vision-based animation of 3D facial avatars

Type: Conference Paper

Publisher: IEEE

Year: 2014

Layout-Aware Delay Variation Optimization for CNTFET-Based Circuits

Type: Conference Paper

Author : Beste, M. , Kiamehr, S. , Tahoori, M.B.

Year: 2014

Characteristic Evolution From Rectifier Schottky Diode to Resistive-Switching Memory With Al-Doped Zinc Tin Oxide Film

Type: Journal Paper

Author : Yang-Shun Fan; Po-Tsun Liu

Publisher: IEEE

Year: 2014

Development of a Conductive Distributed Bragg Reflector for Heterojunction Solar Cells Using <italic>N </italic>-Doped Microcrystalline Silicon and Aluminum-Doped Zinc Oxide Films

Type: Journal Paper

Author : Zhi Peng Ling; Mueller, Thomas; Aberle, Armin G.; Stangl, Rolf

Publisher: IEEE

Year: 2014

Effect of Multiple Frequency H<sub>2</sub>/Ar Plasma Treatment on the Optical, Electrical, and Structural Properties of AZO Films

Type: Journal Paper

Author : Mingzhi Wu; Tianyuan Huang; Chenggang Jin; Lanjian Zhuge; Qin Han; Xuemei Wu

Publisher: IEEE

Year: 2014

Improvement of Resistive Switching Uniformity for Al–Zn–Sn–O-Based Memory Device With Inserting HfO<sub>2</sub> Layer

Type: Journal Paper

Author : Po-Tsun Liu; Yang-Shun Fan; Chun-Ching Chen

Publisher: IEEE

Year: 2014

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ساخت کاتالیست Cu-ZnO-Al2O3 ارزیابی فعالیت آن در واکنش جابجایی آب-گاز دما پایین

تأثیر نوع سوخت در سنتز احتراقی نانو کاتالیست CuO-ZnO-Al2O3/HZSM-5 جهت استفاده در تبدیل یک مرحله ای گاز سنتز به دی متیل تر به عنوان سوخت سبز

Effect of the Vertical Transportation Component of the TCO Layer on the Electrical Properties of Silicon Heterojunction Solar Cells

FDCCII-based P, PI, PD and PID controllers

Vision-based animation of 3D facial avatars

Layout-Aware Delay Variation Optimization for CNTFET-Based Circuits

Characteristic Evolution From Rectifier Schottky Diode to Resistive-Switching Memory With Al-Doped Zinc Tin Oxide Film

Development of a Conductive Distributed Bragg Reflector for Heterojunction Solar Cells Using <italic>N </italic>-Doped Microcrystalline Silicon and Aluminum-Doped Zinc Oxide Films

Effect of Multiple Frequency H<sub>2</sub>/Ar Plasma Treatment on the Optical, Electrical, and Structural Properties of AZO Films

Improvement of Resistive Switching Uniformity for Al–Zn–Sn–O-Based Memory Device With Inserting HfO<sub>2</sub> Layer

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ساخت کاتالیست Cu-ZnO-Al2O3 ارزیابی فعالیت آن در واکنش جابجایی آب-گاز دما پایین

تأثیر نوع سوخت در سنتز احتراقی نانو کاتالیست CuO-ZnO-Al2O3/HZSM-5 جهت استفاده در تبدیل یک مرحله ای گاز سنتز به دی متیل تر به عنوان سوخت سبز

Effect of the Vertical Transportation Component of the TCO Layer on the Electrical Properties of Silicon Heterojunction Solar Cells

FDCCII-based P, PI, PD and PID controllers

Vision-based animation of 3D facial avatars

Layout-Aware Delay Variation Optimization for CNTFET-Based Circuits

Characteristic Evolution From Rectifier Schottky Diode to Resistive-Switching Memory With Al-Doped Zinc Tin Oxide Film

Development of a Conductive Distributed Bragg Reflector for Heterojunction Solar Cells Using <italic>N </italic>-Doped Microcrystalline Silicon and Aluminum-Doped Zinc Oxide Films

Effect of Multiple Frequency H<sub>2</sub>/Ar Plasma Treatment on the Optical, Electrical, and Structural Properties of AZO Films

Improvement of Resistive Switching Uniformity for Al&#x2013;Zn&#x2013;Sn&#x2013;O-Based Memory Device With Inserting HfO<sub>2</sub> Layer

Improvement of Resistive Switching Uniformity for Al–Zn–Sn–O-Based Memory Device With Inserting HfO<sub>2</sub> Layer