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RISIMPROVED SHORT CHANNEL EFFECTS IN 4H-SIC MOSFET WITH DUAL MATERIAL GATE STRUCTURE
A dual material gate structure for a 4H-SiC MOSFET have been proposed as a possible way to reduce short channel effects such as DIBL, hot electron effects, and high electric fields. The gate of the DMG
(Dual Material Gate) 4H-SiC MOSFET...
محاسبه تحرک پذیری الکترونها در ساختارهای4H-sic و 6H-sic با استفاده از حل معادله بولتزمن به روش برگشت پذیر در حضور میدانهای الکتریکی ضعیف
محاسبه تحرک پذیری الکترونها در ساختارهای4H-sic و 6H-sic با استفاده از حل معادله بولتزمن به روش برگشت پذیر در حضور میدانهای الکتریکی ضعیف...
Improved Performance of Double-recessed 4H-SiC MESFETs Structure with Multi-recessed Drift Region
A double-recessed 4H-SiC MESFETs with multi-recessed sourcedrain drift region was proposed. The multi-recessed drift region is to reduce channel thickness between gate and drain as well as eliminate gate depletion layer extension to sourcedrain...
On the Crossing-Point of 4H-SiC Power Diodes Characteristics
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A novel 4H–SiC MESFET with recessed gate and channel
of the proposed
structures are simulated and compared with the conventional
4H–SiC MESFET. Simulation results disclose that, compared to
the conventional structure, the structure with recessed full gate
and channel (FGC):
1...