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Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current

Type: Journal Paper

Author : Beneventi, Giovanni Betti; Gnani, Elena; Gnudi, A.; Reggiani, S.; Baccarani, G.

Publisher: IEEE

Year: 2014

Technology-Related Interruptions and Paper-Based Documents in Back-Office Knowledge Work

Type: Conference Paper

Author : Yli-Kauhaluoma, S. , Pantzar, M.

Publisher: IEEE

Year: 2014

Author

Baccarani, G. (1)

Beneventi, Giovanni Betti (1)

Gnani, Elena (1)

Gnudi, A. (1)

Reggiani, S. (1)

Yli-Kauhaluoma, S. , Pantzar, M. (1)

Publisher

IEEE (2)

Year

2014 (2)

Keywords

DMG TFET (2)

tunnel transistors (2)

2020 International Technology Roadmap for Semiconductors requirements (1)

Atlas Device Simulator (1)

Capacitance (1)

device switching characteristics (1)

DMG H-D TFET (1)

double gate n-type TFET architectures (1)

drain current magnitude (1)

drain-current decade (1)

Type

Conference Paper (1)

Journal Paper (1)

Language (ISO)

English (2)

Content Type

Metadata Only (2)

Publication Title

Electron Devices, IEEE Transactions on (1)

ystem Sciences (HICSS), 2014 47th Hawaii International Conference on (1)

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