We report, for the first time, a silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) which has a recessed p-buffer layer into the channel region near the source and a recessed channel into the ...

electric field, breakdown voltage, maximum DC trans-conductance (gm), drain current, gate-source capacitance, cut off frequency and DC output conductance (go) as a function of different source side (Nss) and drain side (Nos) barrier doping levels...

and thicknesses, but with different doping levels. Changes that occur in the breakdown voltage, DC trans-conductance, drain current, gate-source capacitance, cut off frequency, and short channel effect as a function of different source side (NSS) and drain side...

This is the first report of novel structures designated as recessed p-buffer (RPB) silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs). Important parameters suchas gate–source capacitance, short channel effect, DC trans-conductance...

, and the channel is recessed into the p-buffer layer

at the source and/or the drain side. Important parameters such as

short channel effect, maximum DC trans-conductance (gm), drain

current, breakdown voltage and output resistance...