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نمایش تعداد 1-100 از 107
نتایج
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#x03BA (6)
> (2)
< (2)
)d (2)
)e (2)
)f<br><br>Keywords: A-La2O3 (1)
)f<br><br>Keywords: j-Al2O3 (1)
-AlN-GaN (1)
-GaAs (1)
-HfO< (1)
-InAs-InAlAs (1)
-InGaZnO (1)
-Si (2)
-Si< (1)
-SiO< (2)
-ZrO< (2)
/sub> (53)
0.4< (1)
0.47< (1)
0.53< (1)
0.6< (1)
1-MTJ based STT-MRAM bitcell (1)
1-x< (1)
1/f noise (1)
1/f noise sources (1)
1T FeMOS device (1)
2< (46)
2-x< (1)
20 (2)
22 (2)
2D electron gas (1)
2D Poisson equation (1)
2DEG channel (1)
3< (23)
3-< (1)
3.5< (1)
3D integrated circuit (1)
3D integrated circuits (1)
3D technology computer-aided design (1)
4< (1)
5< (1)
6,13-bis(triisopropylsilylethynyl)-pentacene (1)
61 (2)
63 (2)
66 (2)
a-IGZO TFT (1)
ab initio calculations (1)
ab-initio calculation (1)
Abstracts (7)
Acceleration (1)
acceptor-like border (1)
accumulation region (1)
active channel well (1)
active layer (1)
active-matrix liquid crystal display (1)
actual device structures (1)
adhesion (1)
adhesion properties (1)
Al (1)
Al doped HfO2 gate dielectric (1)
Al&a (1)
Al< (13)
Al-HfTiON-AlON-GaAs (1)
Al-Si (1)
Al:ZrO< (1)
ALD (1)
ALE (1)
AlGaN-GaN (4)
AlGaN-GaN nanoscale HEMT (1)
AlGaN-GaN-Si (1)
AlHfO< (1)
AlInN-GaN (2)
AlInN-GaN MIS-HEMT (1)
AlO< (1)
alumina (6)
aluminium (1)
aluminium compounds (13)
Aluminum gallium nitride (2)
Aluminum oxide (5)
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amorphous indium-zinc oxide TFTs (1)
amorphous lanthanum aluminate multistacked films (1)
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amorphous semiconductors (3)
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amorphous thin-film transistor (2)
amorphous thin-film transistors (1)
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analytical threshold voltage shift model (1)
anisotropic wet etching (1)
Annealing (4)
annealing (8)
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