Reducing breakthrough dislocation toward Si/SiGe heterostructure to improve advanced HKMG SRAM device performance by optimizing fluorine co-implantation
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سال
: 2014شناسه الکترونیک: 10.1109/ISETC.2014.7010793
کلیدواژه(گان): assistive outdoor navigation,blind and visually impaired users,wearable devices
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آمار بازدید
Reducing breakthrough dislocation toward Si/SiGe heterostructure to improve advanced HKMG SRAM device performance by optimizing fluorine co-implantation
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| date accessioned | 2020-03-12T19:56:46Z | |
| date available | 2020-03-12T19:56:46Z | |
| date issued | 2014 | |
| identifier other | 6842052.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/996180 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Reducing breakthrough dislocation toward Si/SiGe heterostructure to improve advanced HKMG SRAM device performance by optimizing fluorine co-implantation | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8115847 | |
| subject keywords | assistive outdoor navigation | |
| subject keywords | blind and visually impaired users | |
| subject keywords | wearable devices | |
| identifier doi | 10.1109/ISETC.2014.7010793 | |
| journal title | unction Technology (IWJT), 2014 International Workshop on | |
| filesize | 540105 | |
| citations | 0 | |
| contributor rawauthor | Chin, Y.L. , Lin, Y.S. , Hu, Y.C. , Chang, M.H. , Yu, T.W. , Chen, W.T. , Yang, C.Y. , Lin, Y.J. , Chien, C.C. , Wu, J.Y. |