Linear diversity analysis for QAM in Rician fading channels
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سال
: 2014شناسه الکترونیک: 10.1109/EEEI.2014.7005898
کلیدواژه(گان): Electron mobility,Logic gates,MOSFET,Resistance,Temperature,Temperature measurement,Threshold voltage,Nanoscale FD-SOI MOSFET,TCAD,Y-function,mobility,series resistance
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Linear diversity analysis for QAM in Rician fading channels
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contributor author | Jonqyin Sun | |
date accessioned | 2020-03-12T19:55:32Z | |
date available | 2020-03-12T19:55:32Z | |
date issued | 2014 | |
identifier other | 6839960.pdf | |
identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/995372 | |
format | general | |
language | English | |
publisher | IEEE | |
title | Linear diversity analysis for QAM in Rician fading channels | |
type | Conference Paper | |
contenttype | Metadata Only | |
identifier padid | 8114896 | |
subject keywords | Electron mobility | |
subject keywords | Logic gates | |
subject keywords | MOSFET | |
subject keywords | Resistance | |
subject keywords | Temperature | |
subject keywords | Temperature measurement | |
subject keywords | Threshold voltage | |
subject keywords | Nanoscale FD-SOI MOSFET | |
subject keywords | TCAD | |
subject keywords | Y-function | |
subject keywords | mobility | |
subject keywords | series resistance | |
identifier doi | 10.1109/EEEI.2014.7005898 | |
journal title | ireless and Optical Communication Conference (WOCC), 2014 23rd | |
filesize | 341621 | |
citations | 0 |