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Effects of interlayers in threading dislocation reduction of step-graded InGaN heteroepitaxy

date accessioned2020-03-12T19:35:41Z
date available2020-03-12T19:35:41Z
date issued2014
identifier other6777885.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/983007?show=full
formatgeneral
languageEnglish
publisherIEEE
titleEffects of interlayers in threading dislocation reduction of step-graded InGaN heteroepitaxy
typeConference Paper
contenttypeMetadata Only
identifier padid8098275
subject keywordsCMOS integrated circuits
subject keywordshigh-speed integrated circuits
subject keywordsinductors
subject keywordsintegrated circuit layout
subject keywordsoscillators
subject keywordstransistors
subject keywords4-stage ring oscillator
subject keywordsCMOS
subject keywordsbroadband high-speed circuits
subject keywordsdifferential pair layout styles
subject keywordsdifferential stacked spiral inductor
subject keywordshalf-inter-digitated differential pair layout
subject keywordsinductance density
subject keywordsself-resonance frequency
subject keywordssize 65 nm
subject keywordstransistor layout designs
subject keywordsCMOS integrated circuits
subject keywordsDecision support systems
subject keywordsInductance
subject keywordsInductors
subject keywordsLayout
subject keywordsMetals
subject keywordsTransistors
subject keywordsDifferent
identifier doi10.1109/RFIT.2014.6933266
journal titlelectrical Information and Communication Technology (EICT), 2013 International Conference on
filesize323433
citations0
contributor rawauthorKhatun, S. , Sanober, S.A. , Hossain, M.A. , Islam, M.R.


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