Seeing with Paper: Government Documents and Material Participation
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سال
: 2014شناسه الکترونیک: 10.1109/ICDCSyst.2014.6926181
کلیدواژه(گان): analogue integrated circuits,digital integrated circuits,field effect transistors,invertors,semiconductor device models,semiconductor device reliability,technology CAD (electronics),ATLAS 3D device simulation,DMG-RingFET,SMG RingFET device architectures,TCAD assessment,analog applications,digital applications,drain current,dual material gate nanoscale RingFET,early voltage,high-k gate dielectric,inverter gain,output voltage,reliability,transconductance generation efficiency
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Seeing with Paper: Government Documents and Material Participation
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| date accessioned | 2020-03-12T19:32:31Z | |
| date available | 2020-03-12T19:32:31Z | |
| date issued | 2014 | |
| identifier other | 6758792.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/981171 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Seeing with Paper: Government Documents and Material Participation | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8095714 | |
| subject keywords | analogue integrated circuits | |
| subject keywords | digital integrated circuits | |
| subject keywords | field effect transistors | |
| subject keywords | invertors | |
| subject keywords | semiconductor device models | |
| subject keywords | semiconductor device reliability | |
| subject keywords | technology CAD (electronics) | |
| subject keywords | ATLAS 3D device simulation | |
| subject keywords | DMG-RingFET | |
| subject keywords | SMG RingFET device architectures | |
| subject keywords | TCAD assessment | |
| subject keywords | analog applications | |
| subject keywords | digital applications | |
| subject keywords | drain current | |
| subject keywords | dual material gate nanoscale RingFET | |
| subject keywords | early voltage | |
| subject keywords | high-k gate dielectric | |
| subject keywords | inverter gain | |
| subject keywords | output voltage | |
| subject keywords | reliability | |
| subject keywords | transconductance generation efficiency | |
| identifier doi | 10.1109/ICDCSyst.2014.6926181 | |
| journal title | ystem Sciences (HICSS), 2014 47th Hawaii International Conference on | |
| filesize | 271546 | |
| citations | 0 | |
| contributor rawauthor | Finn, Megan , Srinivasan, Janaki , Veeraraghavan, Rajesh |