<formula formulatype="inline"> <img src="/images/tex/21154.gif" alt="{\\rm In}_{0.53}{\\rm Ga}_{0.47}{\\rm As}"> </formula> Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels
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سال
: 2014شناسه الکترونیک: 10.1109/LED.2014.2301843
کلیدواژه(گان): III-V semiconductors,MOSFET,gallium arsenide,indium compounds,millimetre wave field effect transistors,nanowires,III-V multiple-gate MOSFET,In<,sub>,0.53<,/sub>,Ga<,sub>,0.47<,/sub>,As,drain-induced barrier,extrapolated cutoff frequency,frequency 210 GHz,frequency 250 GHz,maximum oscillation frequency,minimum subthreshold slope,n-channel MuGFET,n-channel multiple-gate field-effect transistors,selectively regrown channels,selectively regrown lateral nanowires,Ind
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آمار بازدید
<formula formulatype="inline"> <img src="/images/tex/21154.gif" alt="{\\rm In}_{0.53}{\\rm Ga}_{0.47}{\\rm As}"> </formula> Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels
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| contributor author | Zota, Cezar B. | |
| contributor author | Wernersson, Lars-Erik | |
| contributor author | Lind, Erik | |
| date accessioned | 2020-03-12T18:46:07Z | |
| date available | 2020-03-12T18:46:07Z | |
| date issued | 2014 | |
| identifier issn | 0741-3106 | |
| identifier other | 6739081.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/969521 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | <formula formulatype="inline"> <img src="/images/tex/21154.gif" alt="{\\rm In}_{0.53}{\\rm Ga}_{0.47}{\\rm As}"> </formula> Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8003822 | |
| subject keywords | III-V semiconductors | |
| subject keywords | MOSFET | |
| subject keywords | gallium arsenide | |
| subject keywords | indium compounds | |
| subject keywords | millimetre wave field effect transistors | |
| subject keywords | nanowires | |
| subject keywords | III-V multiple-gate MOSFET | |
| subject keywords | In< | |
| subject keywords | sub> | |
| subject keywords | 0.53< | |
| subject keywords | /sub> | |
| subject keywords | Ga< | |
| subject keywords | sub> | |
| subject keywords | 0.47< | |
| subject keywords | /sub> | |
| subject keywords | As | |
| subject keywords | drain-induced barrier | |
| subject keywords | extrapolated cutoff frequency | |
| subject keywords | frequency 210 GHz | |
| subject keywords | frequency 250 GHz | |
| subject keywords | maximum oscillation frequency | |
| subject keywords | minimum subthreshold slope | |
| subject keywords | n-channel MuGFET | |
| subject keywords | n-channel multiple-gate field-effect transistors | |
| subject keywords | selectively regrown channels | |
| subject keywords | selectively regrown lateral nanowires | |
| subject keywords | Ind | |
| identifier doi | 10.1109/LED.2014.2301843 | |
| journal title | Electron Device Letters, IEEE | |
| journal volume | 35 | |
| journal issue | 3 | |
| filesize | 1737012 | |
| citations | 0 |