Simple scheme to increase hold voltage for silicon-controlled rectifier
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سال
: 2014شناسه الکترونیک: 10.1049/el.2013.1853
کلیدواژه(گان): thyristors,SCR,highly doped P<,sup>,+<,/sup>,diffusion,hold voltage,latch-up immunity enhancement,lightly doped P-diffusion,silicon-controlled rectifier,trigger voltage
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Simple scheme to increase hold voltage for silicon-controlled rectifier
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| contributor author | Hung, Cheng-Yuan | |
| contributor author | Kao, Tzu-Cheng | |
| contributor author | Lee, Joun-Ho | |
| contributor author | Gong, Jianya | |
| contributor author | Huang, Tiao-Yuan | |
| contributor author | Su, Hung-Der | |
| contributor author | Chang, Kuo-Chu | |
| contributor author | Huang, Chih-Fang | |
| contributor author | Lo, Kuo-Hsuan | |
| date accessioned | 2020-03-12T18:45:03Z | |
| date available | 2020-03-12T18:45:03Z | |
| date issued | 2014 | |
| identifier issn | 0013-5194 | |
| identifier other | 6731761.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/968871 | |
| format | general | |
| language | English | |
| publisher | IET | |
| title | Simple scheme to increase hold voltage for silicon-controlled rectifier | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8003074 | |
| subject keywords | thyristors | |
| subject keywords | SCR | |
| subject keywords | highly doped P< | |
| subject keywords | sup> | |
| subject keywords | +< | |
| subject keywords | /sup> | |
| subject keywords | diffusion | |
| subject keywords | hold voltage | |
| subject keywords | latch-up immunity enhancement | |
| subject keywords | lightly doped P-diffusion | |
| subject keywords | silicon-controlled rectifier | |
| subject keywords | trigger voltage | |
| identifier doi | 10.1049/el.2013.1853 | |
| journal title | Electronics Letters | |
| journal volume | 50 | |
| journal issue | 3 | |
| filesize | 366592 | |
| citations | 0 |