Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-<formula formulatype="inline"> <img src="/images/tex/348.gif" alt="k"> </formula> Passivation Layer
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: 2014شناسه الکترونیک: 10.1109/TED.2014.2298194
کلیدواژه(گان): III-V semiconductors,aluminium compounds,gallium compounds,high electron mobility transistors,high-k dielectric thin films,numerical analysis,passivation,permittivity,semiconductor device breakdown,wide band gap semiconductors,2Dmbreakdown characteristic analysis,AlGaN-GaN,HEMTs,OFF-state breakdown voltage,breakdown voltage enhancement,buffer layer,deep acceptor,deep donor,drain edge,electric field,high electron mobility transistors,high-k passivation layer,insulator,numer
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Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-<formula formulatype="inline"> <img src="/images/tex/348.gif" alt="k"> </formula> Passivation Layer
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| contributor author | Hanawa, H. | |
| contributor author | Onodera, Hidetoshi | |
| contributor author | Nakajima, Akitoshi | |
| contributor author | Horio, K. | |
| date accessioned | 2020-03-12T18:40:30Z | |
| date available | 2020-03-12T18:40:30Z | |
| date issued | 2014 | |
| identifier issn | 0018-9383 | |
| identifier other | 6712055.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/966440 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-<formula formulatype="inline"> <img src="/images/tex/348.gif" alt="k"> </formula> Passivation Layer | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8000254 | |
| subject keywords | III-V semiconductors | |
| subject keywords | aluminium compounds | |
| subject keywords | gallium compounds | |
| subject keywords | high electron mobility transistors | |
| subject keywords | high-k dielectric thin films | |
| subject keywords | numerical analysis | |
| subject keywords | passivation | |
| subject keywords | permittivity | |
| subject keywords | semiconductor device breakdown | |
| subject keywords | wide band gap semiconductors | |
| subject keywords | 2Dmbreakdown characteristic analysis | |
| subject keywords | AlGaN-GaN | |
| subject keywords | HEMTs | |
| subject keywords | OFF-state breakdown voltage | |
| subject keywords | breakdown voltage enhancement | |
| subject keywords | buffer layer | |
| subject keywords | deep acceptor | |
| subject keywords | deep donor | |
| subject keywords | drain edge | |
| subject keywords | electric field | |
| subject keywords | high electron mobility transistors | |
| subject keywords | high-k passivation layer | |
| subject keywords | insulator | |
| subject keywords | numer | |
| identifier doi | 10.1109/TED.2014.2298194 | |
| journal title | Electron Devices, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 3 | |
| filesize | 3206088 | |
| citations | 0 |