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A Test Structure to Characterize Nano-Scale Ohmic Contacts in III-V MOSFETs

contributor authorWenjie Lu
contributor authorGuo, Anjin
contributor authorVardi, Alon
contributor authordel Alamo, Jesus /A/.
date accessioned2020-03-12T18:39:15Z
date available2020-03-12T18:39:15Z
date issued2014
identifier issn0741-3106
identifier other6704309.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/965729?show=full
formatgeneral
languageEnglish
publisherIEEE
titleA Test Structure to Characterize Nano-Scale Ohmic Contacts in III-V MOSFETs
typeJournal Paper
contenttypeMetadata Only
identifier padid7999423
subject keywordsMOSFET
subject keywordscontact resistance
subject keywordsgallium arsenide
subject keywordsindium compounds
subject keywordsmolybdenum
subject keywordsohmic contacts
subject keywordssemiconductor device models
subject keywordstransmission lines
subject keywords2D distributed resistive network
subject keywordsIII-V MOSFET
subject keywordsKelvin measurements
subject keywordsMo-InGaAs
subject keywordsMo-InGaAs contacts
subject keywordsTLM
subject keywordscontact resistance
subject keywordscontact resistivity
subject keywordscontact spacing
subject keywordselectrical properties
subject keywordsmetal sheet resistance
subject keywordsnanoscale metal-semiconductor contacts
subject keywordsnanoscale ohmic contacts
subject keywordssemiconductor sheet resistance
subject keywordstest structure
subject keywordstransmission line model
subject keywordsContact re
identifier doi10.1109/LED.2013.2295328
journal titleElectron Device Letters, IEEE
journal volume35
journal issue2
filesize818930
citations0


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