A Complete Resistive-Open Defect Analysis for Thermally Assisted Switching MRAMs
نویسنده:
, , , , , , ,ناشر:
سال
: 2014شناسه الکترونیک: 10.1109/TVLSI.2013.2294080
کلیدواژه(گان): MRAM devices,complete resistive-open defect analysis,double-cell faulty behavior,electrical simulation,high-integration density,hypothetical 16 word TAS-MRAM architecture,magnetic random access memory,read and write operation,thermally assisted switching MRAM,universal on-chip memory,Heating,Magnetic domains,Magnetic separation,Magnetic switching,Magnetic tunneling,Magnetization,Switches,Fault modeling,nonvolatile memories (NVM),resistive-open defects,spintronics,test,test.
کالکشن
:
-
آمار بازدید
A Complete Resistive-Open Defect Analysis for Thermally Assisted Switching MRAMs
Show full item record
| contributor author | Azevedo, Joao | |
| contributor author | Virazel, A. | |
| contributor author | Bosio, A. | |
| contributor author | Dilillo, L. | |
| contributor author | Girard, P. | |
| contributor author | Todri-Sanial, Aida | |
| contributor author | Alvarez-Herault, Jeremy | |
| contributor author | Mackay, Ken | |
| date accessioned | 2020-03-12T18:38:45Z | |
| date available | 2020-03-12T18:38:45Z | |
| date issued | 2014 | |
| identifier issn | 1063-8210 | |
| identifier other | 6701223.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/965451 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | A Complete Resistive-Open Defect Analysis for Thermally Assisted Switching MRAMs | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 7999106 | |
| subject keywords | MRAM devices | |
| subject keywords | complete resistive-open defect analysis | |
| subject keywords | double-cell faulty behavior | |
| subject keywords | electrical simulation | |
| subject keywords | high-integration density | |
| subject keywords | hypothetical 16 word TAS-MRAM architecture | |
| subject keywords | magnetic random access memory | |
| subject keywords | read and write operation | |
| subject keywords | thermally assisted switching MRAM | |
| subject keywords | universal on-chip memory | |
| subject keywords | Heating | |
| subject keywords | Magnetic domains | |
| subject keywords | Magnetic separation | |
| subject keywords | Magnetic switching | |
| subject keywords | Magnetic tunneling | |
| subject keywords | Magnetization | |
| subject keywords | Switches | |
| subject keywords | Fault modeling | |
| subject keywords | nonvolatile memories (NVM) | |
| subject keywords | resistive-open defects | |
| subject keywords | spintronics | |
| subject keywords | test | |
| subject keywords | test. | |
| identifier doi | 10.1109/TVLSI.2013.2294080 | |
| journal title | Very Large Scale Integration (VLSI) Systems, IEEE Transactions on | |
| journal volume | 22 | |
| journal issue | 11 | |
| filesize | 2625871 | |
| citations | 0 |