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Datasheet Driven Silicon Carbide Power MOSFET Model

contributor authorMudholkar, Mihir
contributor authorAhmed, Shehab
contributor authorEricson, M. Nance
contributor authorFrank, S. Shane
contributor authorBritton, Charles L.
contributor authorMantooth, Homer Alan
date accessioned2020-03-12T18:37:15Z
date available2020-03-12T18:37:15Z
date issued2014
identifier issn0885-8993
identifier other6690196.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/964600?show=full
formatgeneral
languageEnglish
publisherIEEE
titleDatasheet Driven Silicon Carbide Power MOSFET Model
typeJournal Paper
contenttypeMetadata Only
identifier padid7998138
subject keywordscapacitance
subject keywordspower MOSFET
subject keywordssemiconductor device models
subject keywordssilicon compounds
subject keywordsswitching
subject keywordswide band gap semiconductors
subject keywordsCV characteristics
subject keywordsSiC
subject keywordschannel current
subject keywordscurrent 20 A
subject keywordsdatasheet driven silicon carbide power MOSFET model
subject keywordsdc characteristics
subject keywordsinternal capacitances
subject keywordson-state resistance
subject keywordsswitching characteristics
subject keywordstemperature 25 degC to 225 degC
subject keywordsvoltage 1200 V
subject keywordsCapacitance
subject keywordsLogic gates
subject keywordsMOSFET
subject keywordsMathematical model
subject keywordsParameter extraction
subject keywordsSemiconductor device modeling
subject keywordsSilicon carbide
subject keywordsDevice char
identifier doi10.1109/TPEL.2013.2295774
journal titlePower Electronics, IEEE Transactions on
journal volume29
journal issue5
filesize1912211
citations0


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