High-Performance Solution-Processed InGaZnO Thin-Film Transistor Fabricated by Ozone-Assisted Atmospheric Pressure Mist Deposition
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: 2014شناسه الکترونیک: 10.1109/JDT.2013.2294967
کلیدواژه(گان): III-V semiconductors,aluminium compounds,atmospheric pressure,chemical vapour deposition,electric breakdown,electric fields,gallium compounds,indium compounds,permittivity,thin film transistors,wide band gap semiconductors,zinc compounds,AP-deposited stack,AlO<,sub>,x<,/sub>,CVD,InGaZnO,TFT,breakdown electric field,chemical vapor deposition,dielectric constant,electrical properties,field effect mobility,gate dielectric stack,high-performance solution-processed thi
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High-Performance Solution-Processed InGaZnO Thin-Film Transistor Fabricated by Ozone-Assisted Atmospheric Pressure Mist Deposition
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| contributor author | Furuta, Mamoru | |
| contributor author | Kawaharamura, Toshiyuki | |
| contributor author | Uchida, Tomoyuki | |
| contributor author | Dapeng Wang | |
| contributor author | Sanada, Masayuki | |
| date accessioned | 2020-03-12T18:36:34Z | |
| date available | 2020-03-12T18:36:34Z | |
| date issued | 2014 | |
| identifier issn | 1551-319X | |
| identifier other | 6685873.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/964224 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | High-Performance Solution-Processed InGaZnO Thin-Film Transistor Fabricated by Ozone-Assisted Atmospheric Pressure Mist Deposition | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 7997688 | |
| subject keywords | III-V semiconductors | |
| subject keywords | aluminium compounds | |
| subject keywords | atmospheric pressure | |
| subject keywords | chemical vapour deposition | |
| subject keywords | electric breakdown | |
| subject keywords | electric fields | |
| subject keywords | gallium compounds | |
| subject keywords | indium compounds | |
| subject keywords | permittivity | |
| subject keywords | thin film transistors | |
| subject keywords | wide band gap semiconductors | |
| subject keywords | zinc compounds | |
| subject keywords | AP-deposited stack | |
| subject keywords | AlO< | |
| subject keywords | sub> | |
| subject keywords | x< | |
| subject keywords | /sub> | |
| subject keywords | CVD | |
| subject keywords | InGaZnO | |
| subject keywords | TFT | |
| subject keywords | breakdown electric field | |
| subject keywords | chemical vapor deposition | |
| subject keywords | dielectric constant | |
| subject keywords | electrical properties | |
| subject keywords | field effect mobility | |
| subject keywords | gate dielectric stack | |
| subject keywords | high-performance solution-processed thi | |
| identifier doi | 10.1109/JDT.2013.2294967 | |
| journal title | Display Technology, Journal of | |
| journal volume | 10 | |
| journal issue | 11 | |
| filesize | 1059706 | |
| citations | 0 |