Suppression of Hole Overflow and Enhancement of Light Emission Efficiency in Si Quantum Dots Based Silicon Nitride Light Emitting Diodes
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: 2014DOI: 10.1109/JSTQE.2013.2284420
Keyword(s): electron-hole recombination,elemental semiconductors,light emitting diodes,luminescence,quantum dots,silicon,silicon compounds,Si-SiN,bimolecular radiative recombination probability,hole blocking layer,hole overflow suppression,light emission efficiency enhancement,light emitting diodes,luminescent active,quantum dot,voltage 6 V,white light emission,Current density,Electroluminescence,Light emitting diodes,Quantum dots,Radiative recombination,Silicon,Silicon compounds,Ele
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Suppression of Hole Overflow and Enhancement of Light Emission Efficiency in Si Quantum Dots Based Silicon Nitride Light Emitting Diodes
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| contributor author | Rui Huang | |
| contributor author | Zewen Lin | |
| contributor author | Zhenxu Lin | |
| contributor author | Chao Song | |
| contributor author | Xiang Wang | |
| contributor author | Yanqing Guo | |
| contributor author | Jie Song | |
| date accessioned | 2020-03-12T18:29:54Z | |
| date available | 2020-03-12T18:29:54Z | |
| date issued | 2014 | |
| identifier issn | 1077-260X | |
| identifier other | 6630077.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/960514?locale-attribute=en | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Suppression of Hole Overflow and Enhancement of Light Emission Efficiency in Si Quantum Dots Based Silicon Nitride Light Emitting Diodes | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 7993198 | |
| subject keywords | electron-hole recombination | |
| subject keywords | elemental semiconductors | |
| subject keywords | light emitting diodes | |
| subject keywords | luminescence | |
| subject keywords | quantum dots | |
| subject keywords | silicon | |
| subject keywords | silicon compounds | |
| subject keywords | Si-SiN | |
| subject keywords | bimolecular radiative recombination probability | |
| subject keywords | hole blocking layer | |
| subject keywords | hole overflow suppression | |
| subject keywords | light emission efficiency enhancement | |
| subject keywords | light emitting diodes | |
| subject keywords | luminescent active | |
| subject keywords | quantum dot | |
| subject keywords | voltage 6 V | |
| subject keywords | white light emission | |
| subject keywords | Current density | |
| subject keywords | Electroluminescence | |
| subject keywords | Light emitting diodes | |
| subject keywords | Quantum dots | |
| subject keywords | Radiative recombination | |
| subject keywords | Silicon | |
| subject keywords | Silicon compounds | |
| subject keywords | Ele | |
| identifier doi | 10.1109/JSTQE.2013.2284420 | |
| journal title | Selected Topics in Quantum Electronics, IEEE Journal of | |
| journal volume | 20 | |
| journal issue | 4 | |
| filesize | 562365 | |
| citations | 0 |