A 200 °C Safety System at Power-Up of Normally On SiC JFETs Inverters
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: 2014شناسه الکترونیک: 10.1109/TPEL.2013.2281669
کلیدواژه(گان): JFET circuits,ageing,circuit reliability,invertors,power semiconductor devices,silicon compounds,wide band gap semiconductors,JFET ageing,current 10 A,inverter operation,junction field effect transistor,normally on JFET inverters,normally on power device,power devices,protection circuit,reliability test,safety system,temperature 27 C to 200 C,voltage 540 V,voltage fed inverter,Inductance,Inverters,JFETs,Logic gates,Safety,Silicon carbide,Temperature,Experimental circui
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A 200 °C Safety System at Power-Up of Normally On SiC JFETs Inverters
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| contributor author | Risaletto, Damien | |
| contributor author | Bergogne, Dominique | |
| contributor author | Dubois, Fabien | |
| contributor author | Morel, Herve | |
| contributor author | Allard, Bruno | |
| contributor author | Meuret, Regis | |
| date accessioned | 2020-03-12T18:28:08Z | |
| date available | 2020-03-12T18:28:08Z | |
| date issued | 2014 | |
| identifier issn | 0885-8993 | |
| identifier other | 6600900.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/959517 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | A 200 °C Safety System at Power-Up of Normally On SiC JFETs Inverters | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 7992094 | |
| subject keywords | JFET circuits | |
| subject keywords | ageing | |
| subject keywords | circuit reliability | |
| subject keywords | invertors | |
| subject keywords | power semiconductor devices | |
| subject keywords | silicon compounds | |
| subject keywords | wide band gap semiconductors | |
| subject keywords | JFET ageing | |
| subject keywords | current 10 A | |
| subject keywords | inverter operation | |
| subject keywords | junction field effect transistor | |
| subject keywords | normally on JFET inverters | |
| subject keywords | normally on power device | |
| subject keywords | power devices | |
| subject keywords | protection circuit | |
| subject keywords | reliability test | |
| subject keywords | safety system | |
| subject keywords | temperature 27 C to 200 C | |
| subject keywords | voltage 540 V | |
| subject keywords | voltage fed inverter | |
| subject keywords | Inductance | |
| subject keywords | Inverters | |
| subject keywords | JFETs | |
| subject keywords | Logic gates | |
| subject keywords | Safety | |
| subject keywords | Silicon carbide | |
| subject keywords | Temperature | |
| subject keywords | Experimental circui | |
| identifier doi | 10.1109/TPEL.2013.2281669 | |
| journal title | Power Electronics, IEEE Transactions on | |
| journal volume | 29 | |
| journal issue | 5 | |
| filesize | 1658464 | |
| citations | 0 |