Effect of Metal and Carbon Nanotube Interface on Carbon Nanotube Field Effect Transistors (CN-FETs)

Abstract

A computational model for studying the metal and nanotube interface layer properties in Carbon nanotube<br><br>field effect transistors (CNT-FETs) has been carried out. The CNT-FETs can be fabricated both with Ohmic<br><br>and Schottky contacts. Here we have focused on Schottky barrier which operate by modulating the<br><br>transmission coefficient of carriers through the Schottky barrier. The behavior of the devices has been studied<br><br>by using Landauer-Buttiker formalism. Finally the variation of current versus channel properties, voltage and<br><br>other properties has been calculated via our model. The ambipolar behavior was explained based on the<br><br>Schottky-barrier-controlled transistor model, where the transistor action occurs primarily by changing the<br><br>Schottky contact resistance by the gate voltage. The calculation results show a fair agreement with other theoretical and experimental results.