Coexistence of the δl and δTc flux pinning mechanism in nano-Si doped MgB2
نویسنده:
, , , , ,سال
: 2010
چکیده: The flux pinning mechanisms of nano-Si-doped MgB2 are reported in this work. The field
dependence of the critical current density, Jc(B), was analyzed within the collective pinning
model. We found that the mechanisms for both δl pinning, i.e., pinning associated with
charge-carrier mean free path fluctuations, and δTc pinning, which is associated with spatial
fluctuations of the transition temperature, coexist in the nano-Si-doped MgB2 samples, while
Hc2 increases greatly with increasing nano-Si doping level. However, their contributions are
strongly temperature dependent. The δl pinning is dominant at low temperatures, decreases
with increasing temperature, and is suppressed completely at temperatures close to the critical
temperature, Tc. However, the δTc pinning mechanism shows opposite trends.
dependence of the critical current density, Jc(B), was analyzed within the collective pinning
model. We found that the mechanisms for both δl pinning, i.e., pinning associated with
charge-carrier mean free path fluctuations, and δTc pinning, which is associated with spatial
fluctuations of the transition temperature, coexist in the nano-Si-doped MgB2 samples, while
Hc2 increases greatly with increasing nano-Si doping level. However, their contributions are
strongly temperature dependent. The δl pinning is dominant at low temperatures, decreases
with increasing temperature, and is suppressed completely at temperatures close to the critical
temperature, Tc. However, the δTc pinning mechanism shows opposite trends.
کلیدواژه(گان): flux pinning mechanisms,critical current density
کالکشن
:
-
آمار بازدید
Coexistence of the δl and δTc flux pinning mechanism in nano-Si doped MgB2
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contributor author | شعبان رضا قربانی | en |
contributor author | X. L. Wang | en |
contributor author | M. S. H. Hossain | en |
contributor author | S. X. Dou | en |
contributor author | Sung-Ik Lee | en |
contributor author | Shaban Reza Ghorbani | fa |
date accessioned | 2020-06-06T13:10:18Z | |
date available | 2020-06-06T13:10:18Z | |
date issued | 2010 | |
identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/3344459 | |
description abstract | The flux pinning mechanisms of nano-Si-doped MgB2 are reported in this work. The field dependence of the critical current density, Jc(B), was analyzed within the collective pinning model. We found that the mechanisms for both δl pinning, i.e., pinning associated with charge-carrier mean free path fluctuations, and δTc pinning, which is associated with spatial fluctuations of the transition temperature, coexist in the nano-Si-doped MgB2 samples, while Hc2 increases greatly with increasing nano-Si doping level. However, their contributions are strongly temperature dependent. The δl pinning is dominant at low temperatures, decreases with increasing temperature, and is suppressed completely at temperatures close to the critical temperature, Tc. However, the δTc pinning mechanism shows opposite trends. | en |
language | English | |
title | Coexistence of the δl and δTc flux pinning mechanism in nano-Si doped MgB2 | en |
type | Journal Paper | |
contenttype | External Fulltext | |
subject keywords | flux pinning mechanisms | en |
subject keywords | critical current density | en |
journal title | Superconductor Science and Technology | fa |
pages | 25019-25023 | |
journal volume | 23 | |
journal issue | 0 | |
identifier link | https://profdoc.um.ac.ir/paper-abstract-1031121.html | |
identifier articleid | 1031121 |