Resistive Switching Characteristic of Low-Temperature Top-Electrode-Free Tin-Oxide Memristor
سال
: 2017شناسه الکترونیک: 10.1109/TED.2017.2724943
کالکشن
:
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آمار بازدید
Resistive Switching Characteristic of Low-Temperature Top-Electrode-Free Tin-Oxide Memristor
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| contributor author | Chih-Chieh Hsu | |
| contributor author | Po-Yang Chuang | |
| contributor author | Yu-Ting Chen | |
| date accessioned | 2020-03-15T14:33:39Z | |
| date available | 2020-03-15T14:33:39Z | |
| date issued | 2017 | |
| identifier other | 6oI05c4Djnu1gqPypFfaJMaupZQxDlZP3BxsPmk1IEWeiRiJlX.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1973267 | |
| format | general | |
| language | English | |
| title | Resistive Switching Characteristic of Low-Temperature Top-Electrode-Free Tin-Oxide Memristor | |
| type | Journal Paper | |
| contenttype | Fulltext | |
| contenttype | Fulltext | |
| identifier padid | 13719104 | |
| identifier doi | 10.1109/TED.2017.2724943 | |
| journal title | IEEE Transactions on Electron Devices | |
| coverage | Academic | |
| pages | 1-4 | |
| filesize | 1635540 | |
| citations | 0 |