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RF modeling of p-n-p-n double-gate tunneling field-effect transistors

Author:
Saeid Marjani
,
Seyed Ebrahim Hosseini
Year
: 2014
DOI: 10.1109/MMWaTT.2014.7057188
URI: http://libsearch.um.ac.ir:80/fum/handle/fum/1211062
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    RF modeling of p-n-p-n double-gate tunneling field-effect transistors

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contributor authorSaeid Marjani
contributor authorSeyed Ebrahim Hosseini
date accessioned2020-03-13T04:55:11Z
date available2020-03-13T04:55:11Z
date issued2014
identifier otherFCCqxEmqgWWBwThmy2okupQX7KJV9SIJ0HZrkOSRwxQp9G5AkD.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1211062?locale-attribute=en
formatgeneral
languageEnglish
titleRF modeling of p-n-p-n double-gate tunneling field-effect transistors
typeJournal Paper
contenttypeFulltext
contenttypeFulltext
identifier padid8779620
identifier doi10.1109/MMWaTT.2014.7057188
journal title2014 Third Conference on Millimeter-Wave and Terahertz Technologies (MMWATT)
coverageAcademic
filesize281333
citations1
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