State and Angular Dependence of Single-Event Upsets in an Asymmetric RC-Hardened SRAM Using Deep Trench Capacitors
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سال
: 2014شناسه الکترونیک: 10.1109/TNS.2014.2368931
کلیدواژه(گان): SRAM chips,boron,capacitors,radiation hardening (electronics),angular dependence,asymmetric RC-hardened SRAM,capacitive hardening,deep trench capacitors,process induced boron depletion,single event upsets,size 90 nm,state dependence,CMOS process,Capacitors,Doping,Radiation hardening (electronics),SRAM cells,Single event upsets,Asymmetric RC hardening,CMOS,SEU,SRAM,deep trench capacitor
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State and Angular Dependence of Single-Event Upsets in an Asymmetric RC-Hardened SRAM Using Deep Trench Capacitors
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| contributor author | Alles, Michael L. | |
| contributor author | Schrimpf, R.D. | |
| contributor author | Massengill, Lloyd W. | |
| contributor author | Ball, D.R. | |
| contributor author | Kelly, Andrew T. | |
| contributor author | Haddad, Nadim F. | |
| contributor author | Rodgers, John C. | |
| contributor author | Ross, Jason F. | |
| contributor author | Chan, Erwin Hoi Wing | |
| contributor author | Raman, Ashok | |
| contributor author | Turowski, Marek | |
| date accessioned | 2020-03-13T00:31:12Z | |
| date available | 2020-03-13T00:31:12Z | |
| date issued | 2014 | |
| identifier issn | 0018-9499 | |
| identifier other | 6971240.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1149700 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | State and Angular Dependence of Single-Event Upsets in an Asymmetric RC-Hardened SRAM Using Deep Trench Capacitors | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8333007 | |
| subject keywords | SRAM chips | |
| subject keywords | boron | |
| subject keywords | capacitors | |
| subject keywords | radiation hardening (electronics) | |
| subject keywords | angular dependence | |
| subject keywords | asymmetric RC-hardened SRAM | |
| subject keywords | capacitive hardening | |
| subject keywords | deep trench capacitors | |
| subject keywords | process induced boron depletion | |
| subject keywords | single event upsets | |
| subject keywords | size 90 nm | |
| subject keywords | state dependence | |
| subject keywords | CMOS process | |
| subject keywords | Capacitors | |
| subject keywords | Doping | |
| subject keywords | Radiation hardening (electronics) | |
| subject keywords | SRAM cells | |
| subject keywords | Single event upsets | |
| subject keywords | Asymmetric RC hardening | |
| subject keywords | CMOS | |
| subject keywords | SEU | |
| subject keywords | SRAM | |
| subject keywords | deep trench capacitor | |
| identifier doi | 10.1109/TNS.2014.2368931 | |
| journal title | Nuclear Science, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 6 | |
| filesize | 1130223 | |
| citations | 0 |