Influence of Transfer Gate Design and Bias on the Radiation Hardness of Pinned Photodiode CMOS Image Sensors
نویسنده:
, , , , ,ناشر:
سال
: 2014شناسه الکترونیک: 10.1109/TNS.2014.2360773
کلیدواژه(گان): CMOS image sensors,charge exchange,photodiodes,radiation hardening (electronics),TG channel shallow trench isolation trapped charge,TG sidewall spacer positive trapped charge,charge transfer efficiency,dark current,equilibrium full well capacity,gamma ray irradiation,pinned photodiode CMOS image sensors,pinning voltage,premetal dielectric positive trapped charge,radiation hardness,total ionizing dose response,transfer gate design,Active pixel sensors,CMOS image sensors,Dark cur
کالکشن
:
-
آمار بازدید
Influence of Transfer Gate Design and Bias on the Radiation Hardness of Pinned Photodiode CMOS Image Sensors
Show full item record
| contributor author | Goiffon, Vincent | |
| contributor author | Estribeau, Magali | |
| contributor author | Cervantes, Paola | |
| contributor author | Molina, Rafael | |
| contributor author | Gaillardin, M. | |
| contributor author | Magnan, Pierre | |
| date accessioned | 2020-03-13T00:27:36Z | |
| date available | 2020-03-13T00:27:36Z | |
| date issued | 2014 | |
| identifier issn | 0018-9499 | |
| identifier other | 6939744.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1147557 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Influence of Transfer Gate Design and Bias on the Radiation Hardness of Pinned Photodiode CMOS Image Sensors | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8330535 | |
| subject keywords | CMOS image sensors | |
| subject keywords | charge exchange | |
| subject keywords | photodiodes | |
| subject keywords | radiation hardening (electronics) | |
| subject keywords | TG channel shallow trench isolation trapped charge | |
| subject keywords | TG sidewall spacer positive trapped charge | |
| subject keywords | charge transfer efficiency | |
| subject keywords | dark current | |
| subject keywords | equilibrium full well capacity | |
| subject keywords | gamma ray irradiation | |
| subject keywords | pinned photodiode CMOS image sensors | |
| subject keywords | pinning voltage | |
| subject keywords | premetal dielectric positive trapped charge | |
| subject keywords | radiation hardness | |
| subject keywords | total ionizing dose response | |
| subject keywords | transfer gate design | |
| subject keywords | Active pixel sensors | |
| subject keywords | CMOS image sensors | |
| subject keywords | Dark cur | |
| identifier doi | 10.1109/TNS.2014.2360773 | |
| journal title | Nuclear Science, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 6 | |
| filesize | 2355128 | |
| citations | 0 |