Ohmic Contact to n-Type Ge With Compositional W Nitride
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سال
: 2014شناسه الکترونیک: 10.1109/LED.2014.2365186
کلیدواژه(گان): Schottky barriers,electric potential,ohmic contacts,tungsten,Fermi-level pinning effect,Ge,Ohmic contact,Schottky barrier height,W,electrical potential,electron volt energy 0.39 eV,electron volt energy 0.42 eV,electron volt energy 0.47 eV,electron volt energy 0.52 eV,film electrode,ohmic contact,Conductivity,Films,Germanium,Nitrogen,Ohmic contacts,Schottky barriers,Tungsten,Fermi-level pinning,Germanium,Metal nitride,Ohmic contact,Schottky barrier,germanium,metal nit
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آمار بازدید
Ohmic Contact to n-Type Ge With Compositional W Nitride
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| contributor author | Huan Da Wu | |
| contributor author | Chen Wang | |
| contributor author | Jiang Bin Wei | |
| contributor author | Wei Huang | |
| contributor author | Cheng Li | |
| contributor author | Hong Kai Lai | |
| contributor author | Jun Li | |
| contributor author | Chunli Liu | |
| contributor author | Song Yan Chen | |
| date accessioned | 2020-03-13T00:27:20Z | |
| date available | 2020-03-13T00:27:20Z | |
| date issued | 2014 | |
| identifier issn | 0741-3106 | |
| identifier other | 6937144.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1147386 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Ohmic Contact to n-Type Ge With Compositional W Nitride | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8330332 | |
| subject keywords | Schottky barriers | |
| subject keywords | electric potential | |
| subject keywords | ohmic contacts | |
| subject keywords | tungsten | |
| subject keywords | Fermi-level pinning effect | |
| subject keywords | Ge | |
| subject keywords | Ohmic contact | |
| subject keywords | Schottky barrier height | |
| subject keywords | W | |
| subject keywords | electrical potential | |
| subject keywords | electron volt energy 0.39 eV | |
| subject keywords | electron volt energy 0.42 eV | |
| subject keywords | electron volt energy 0.47 eV | |
| subject keywords | electron volt energy 0.52 eV | |
| subject keywords | film electrode | |
| subject keywords | ohmic contact | |
| subject keywords | Conductivity | |
| subject keywords | Films | |
| subject keywords | Germanium | |
| subject keywords | Nitrogen | |
| subject keywords | Ohmic contacts | |
| subject keywords | Schottky barriers | |
| subject keywords | Tungsten | |
| subject keywords | Fermi-level pinning | |
| subject keywords | Germanium | |
| subject keywords | Metal nitride | |
| subject keywords | Ohmic contact | |
| subject keywords | Schottky barrier | |
| subject keywords | germanium | |
| subject keywords | metal nit | |
| identifier doi | 10.1109/LED.2014.2365186 | |
| journal title | Electron Device Letters, IEEE | |
| journal volume | 35 | |
| journal issue | 12 | |
| filesize | 1046496 | |
| citations | 0 |