A Diamond:H/MoO<sub>3</sub> MOSFET
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سال
: 2014شناسه الکترونیک: 10.1109/LED.2014.2364832
کلیدواژه(گان): MOSFET,diamond,molybdenum compounds,semiconductor doping,2D hole gas,drain-current ON-OFF ratio,gate control,gate insulator,gate length devices,heterointerface,heterostructure system,hydrogenated-diamond transfer doping,maximum transconductance,p-type MOSFET,potentially-improved temperature stability,size 3.5 mum,Conductivity,Diamonds,Doping,Logic gates,MOSFET,Surface treatment,Diamond:H,Diamond:H, MoO_{3},MOSFET,MoO3,surface transfer doping
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A Diamond:H/MoO<sub>3</sub> MOSFET
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| contributor author | Vardi, Alon | |
| contributor author | Tordjman, Maurice | |
| contributor author | del Alamo, Jesus /A/. | |
| contributor author | Kalish, Rafi | |
| date accessioned | 2020-03-13T00:27:17Z | |
| date available | 2020-03-13T00:27:17Z | |
| date issued | 2014 | |
| identifier issn | 0741-3106 | |
| identifier other | 6936920.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1147358 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | A Diamond:H/MoO<sub>3</sub> MOSFET | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8330302 | |
| subject keywords | MOSFET | |
| subject keywords | diamond | |
| subject keywords | molybdenum compounds | |
| subject keywords | semiconductor doping | |
| subject keywords | 2D hole gas | |
| subject keywords | drain-current ON-OFF ratio | |
| subject keywords | gate control | |
| subject keywords | gate insulator | |
| subject keywords | gate length devices | |
| subject keywords | heterointerface | |
| subject keywords | heterostructure system | |
| subject keywords | hydrogenated-diamond transfer doping | |
| subject keywords | maximum transconductance | |
| subject keywords | p-type MOSFET | |
| subject keywords | potentially-improved temperature stability | |
| subject keywords | size 3.5 mum | |
| subject keywords | Conductivity | |
| subject keywords | Diamonds | |
| subject keywords | Doping | |
| subject keywords | Logic gates | |
| subject keywords | MOSFET | |
| subject keywords | Surface treatment | |
| subject keywords | Diamond:H | |
| subject keywords | Diamond:H, MoO_{3} | |
| subject keywords | MOSFET | |
| subject keywords | MoO3 | |
| subject keywords | surface transfer doping | |
| identifier doi | 10.1109/LED.2014.2364832 | |
| journal title | Electron Device Letters, IEEE | |
| journal volume | 35 | |
| journal issue | 12 | |
| filesize | 555654 | |
| citations | 0 |