GaSb-InAs n-TFET With Doped Source Underlap Exhibiting Low Subthreshold Swing at Sub-10-nm Gate-Lengths
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: 2014شناسه الکترونیک: 10.1109/LED.2014.2365413
کلیدواژه(گان): Green',s function methods,III-V semiconductors,MOSFET,Poisson equation,ballistic transport,gallium compounds,indium compounds,semiconductor device models,semiconductor doping,tunnelling,GaSb-InAs,Poisson quantum simulation,ballistic tight binding,band diagrams,doped source underlap,heterojuction tunnel field effect transistor,low subthreshold swing TFET,nonequilibrium Green function,Doping,Double-gate FETs,MOSFET,Semiconductor process modeling,Tunneling,Double-gate (DG
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GaSb-InAs n-TFET With Doped Source Underlap Exhibiting Low Subthreshold Swing at Sub-10-nm Gate-Lengths
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| contributor author | Sharma, Ashok | |
| contributor author | Goud, Akkala Arun | |
| contributor author | Roy, Kaushik | |
| date accessioned | 2020-03-13T00:27:16Z | |
| date available | 2020-03-13T00:27:16Z | |
| date issued | 2014 | |
| identifier issn | 0741-3106 | |
| identifier other | 6936893.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1147351 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | GaSb-InAs n-TFET With Doped Source Underlap Exhibiting Low Subthreshold Swing at Sub-10-nm Gate-Lengths | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8330295 | |
| subject keywords | Green' | |
| subject keywords | s function methods | |
| subject keywords | III-V semiconductors | |
| subject keywords | MOSFET | |
| subject keywords | Poisson equation | |
| subject keywords | ballistic transport | |
| subject keywords | gallium compounds | |
| subject keywords | indium compounds | |
| subject keywords | semiconductor device models | |
| subject keywords | semiconductor doping | |
| subject keywords | tunnelling | |
| subject keywords | GaSb-InAs | |
| subject keywords | Poisson quantum simulation | |
| subject keywords | ballistic tight binding | |
| subject keywords | band diagrams | |
| subject keywords | doped source underlap | |
| subject keywords | heterojuction tunnel field effect transistor | |
| subject keywords | low subthreshold swing TFET | |
| subject keywords | nonequilibrium Green function | |
| subject keywords | Doping | |
| subject keywords | Double-gate FETs | |
| subject keywords | MOSFET | |
| subject keywords | Semiconductor process modeling | |
| subject keywords | Tunneling | |
| subject keywords | Double-gate (DG | |
| identifier doi | 10.1109/LED.2014.2365413 | |
| journal title | Electron Device Letters, IEEE | |
| journal volume | 35 | |
| journal issue | 12 | |
| filesize | 767799 | |
| citations | 0 |