Sb-Doped S/D Ultrathin Body Ge-On Insulator nMOSFET Fabricated by Improved Ge Condensation Process
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سال
: 2014شناسه الکترونیک: 10.1109/TED.2014.2350457
کلیدواژه(گان): MOSFET,annealing,antimony,carrier mobility,condensation,elemental semiconductors,germanium,semiconductor doping,GOI inversion type nMOSFET,Ge:Sb,condensation process,hole concentration,solid phase diffusion doping,spin-on-glass technology,temperature 650 C,ultrathin body germanium-on-insulator nMOSFET,Annealing,Atomic layer deposition,Fabrication,Junctions,MOSFET circuits,Oxidation,Silicon,Ge condensation,Ge-on-insulator (GOI),MOSFETs,Sb doping,germanium,mobility,sol
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Sb-Doped S/D Ultrathin Body Ge-On Insulator nMOSFET Fabricated by Improved Ge Condensation Process
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| contributor author | Kim, W.-K. | |
| contributor author | Kuroda, K. | |
| contributor author | Takenaka, Mitsuru | |
| contributor author | Takagi, Shinichi | |
| date accessioned | 2020-03-13T00:21:47Z | |
| date available | 2020-03-13T00:21:47Z | |
| date issued | 2014 | |
| identifier issn | 0018-9383 | |
| identifier other | 6894571.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1143897 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Sb-Doped S/D Ultrathin Body Ge-On Insulator nMOSFET Fabricated by Improved Ge Condensation Process | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8326540 | |
| subject keywords | MOSFET | |
| subject keywords | annealing | |
| subject keywords | antimony | |
| subject keywords | carrier mobility | |
| subject keywords | condensation | |
| subject keywords | elemental semiconductors | |
| subject keywords | germanium | |
| subject keywords | semiconductor doping | |
| subject keywords | GOI inversion type nMOSFET | |
| subject keywords | Ge:Sb | |
| subject keywords | condensation process | |
| subject keywords | hole concentration | |
| subject keywords | solid phase diffusion doping | |
| subject keywords | spin-on-glass technology | |
| subject keywords | temperature 650 C | |
| subject keywords | ultrathin body germanium-on-insulator nMOSFET | |
| subject keywords | Annealing | |
| subject keywords | Atomic layer deposition | |
| subject keywords | Fabrication | |
| subject keywords | Junctions | |
| subject keywords | MOSFET circuits | |
| subject keywords | Oxidation | |
| subject keywords | Silicon | |
| subject keywords | Ge condensation | |
| subject keywords | Ge-on-insulator (GOI) | |
| subject keywords | MOSFETs | |
| subject keywords | Sb doping | |
| subject keywords | germanium | |
| subject keywords | mobility | |
| subject keywords | sol | |
| identifier doi | 10.1109/TED.2014.2350457 | |
| journal title | Electron Devices, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 10 | |
| filesize | 2094743 | |
| citations | 0 |