Design of a Temperature-Aware Low-Voltage SRAM With Self-Adjustable Sensing Margin Enhancement for High-Temperature Applications up to 300 °C
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: 2014DOI: 10.1109/JSSC.2014.2338860
Keyword(s): SRAM chips,low-power electronics,silicon-on-insulator,SOI,SRAM,energy 0.94 pJ,self-adjustable sensing margin enhancement,size 1.0 mum,temperature 300 C,temperature-aware bitline sensing margin enhancement technique,temperature-tracking control circuit,voltage 2 V,voltage 5 V,Reliability,SRAM cells,Temperature distribution,Temperature sensors,Bitline leakage,SOI technology,bitline sensing margin,high temperature,low-voltage SRAM,temperature-aware
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Design of a Temperature-Aware Low-Voltage SRAM With Self-Adjustable Sensing Margin Enhancement for High-Temperature Applications up to 300 °C
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| contributor author | Kim, Tony Tae-Hyoung | |
| contributor author | Ngoc Le Ba | |
| date accessioned | 2020-03-13T00:15:54Z | |
| date available | 2020-03-13T00:15:54Z | |
| date issued | 2014 | |
| identifier issn | 0018-9200 | |
| identifier other | 6867375.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1140336?locale-attribute=en | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Design of a Temperature-Aware Low-Voltage SRAM With Self-Adjustable Sensing Margin Enhancement for High-Temperature Applications up to 300 °C | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8322667 | |
| subject keywords | SRAM chips | |
| subject keywords | low-power electronics | |
| subject keywords | silicon-on-insulator | |
| subject keywords | SOI | |
| subject keywords | SRAM | |
| subject keywords | energy 0.94 pJ | |
| subject keywords | self-adjustable sensing margin enhancement | |
| subject keywords | size 1.0 mum | |
| subject keywords | temperature 300 C | |
| subject keywords | temperature-aware bitline sensing margin enhancement technique | |
| subject keywords | temperature-tracking control circuit | |
| subject keywords | voltage 2 V | |
| subject keywords | voltage 5 V | |
| subject keywords | Reliability | |
| subject keywords | SRAM cells | |
| subject keywords | Temperature distribution | |
| subject keywords | Temperature sensors | |
| subject keywords | Bitline leakage | |
| subject keywords | SOI technology | |
| subject keywords | bitline sensing margin | |
| subject keywords | high temperature | |
| subject keywords | low-voltage SRAM | |
| subject keywords | temperature-aware | |
| identifier doi | 10.1109/JSSC.2014.2338860 | |
| journal title | Solid-State Circuits, IEEE Journal of | |
| journal volume | 49 | |
| journal issue | 11 | |
| filesize | 3268211 | |
| citations | 0 |