A 246 GHz Hetero-Integrated Frequency Source in InP-on-BiCMOS Technology
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سال
: 2014شناسه الکترونیک: 10.1109/LMWC.2014.2316220
کلیدواژه(گان): BiCMOS integrated circuits,III-V semiconductors,MMIC,frequency multipliers,heterojunction bipolar transistors,indium compounds,millimetre wave oscillators,voltage-controlled oscillators,wafer bonding,BiCMOS MMIC,InP,InP-on-BiCMOS technology,VCO,frequency 2 MHz,frequency 246 GHz,frequency 82 GHz,frequency tripler,hetero integrated process,hetero-integrated frequency source,sub-mm-wave frequencies,transferred-substrate InP-HBT technology,voltage controlled oscillator,wafer-le
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A 246 GHz Hetero-Integrated Frequency Source in InP-on-BiCMOS Technology
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| contributor author | Hossain, M. | |
| contributor author | Kraemer, T. | |
| contributor author | Ostermay, Ina | |
| contributor author | Jensen, T. | |
| contributor author | Janke, B. | |
| contributor author | Borokhovych, Y. | |
| contributor author | Lisker, M. | |
| contributor author | Glisic, Savo | |
| contributor author | Elkhouly, Mohamed | |
| contributor author | Borngraeber, J. | |
| contributor author | Tillack, Bernd | |
| contributor author | Meliani, Chafik | |
| contributor author | Krueger, O. | |
| contributor author | Krozer, V. | |
| contributor author | Heinrich, Wolfgang | |
| date accessioned | 2020-03-13T00:08:33Z | |
| date available | 2020-03-13T00:08:33Z | |
| date issued | 2014 | |
| identifier issn | 1531-1309 | |
| identifier other | 6832614.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1135900 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | A 246 GHz Hetero-Integrated Frequency Source in InP-on-BiCMOS Technology | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8317474 | |
| subject keywords | BiCMOS integrated circuits | |
| subject keywords | III-V semiconductors | |
| subject keywords | MMIC | |
| subject keywords | frequency multipliers | |
| subject keywords | heterojunction bipolar transistors | |
| subject keywords | indium compounds | |
| subject keywords | millimetre wave oscillators | |
| subject keywords | voltage-controlled oscillators | |
| subject keywords | wafer bonding | |
| subject keywords | BiCMOS MMIC | |
| subject keywords | InP | |
| subject keywords | InP-on-BiCMOS technology | |
| subject keywords | VCO | |
| subject keywords | frequency 2 MHz | |
| subject keywords | frequency 246 GHz | |
| subject keywords | frequency 82 GHz | |
| subject keywords | frequency tripler | |
| subject keywords | hetero integrated process | |
| subject keywords | hetero-integrated frequency source | |
| subject keywords | sub-mm-wave frequencies | |
| subject keywords | transferred-substrate InP-HBT technology | |
| subject keywords | voltage controlled oscillator | |
| subject keywords | wafer-le | |
| identifier doi | 10.1109/LMWC.2014.2316220 | |
| journal title | Microwave and Wireless Components Letters, IEEE | |
| journal volume | 24 | |
| journal issue | 7 | |
| filesize | 464425 | |
| citations | 0 |