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Internal Quantum Efficiency Enhancement by Relieving Compressive Stress of GaN-Based LED

contributor authorYi Chin Lin
contributor authorWei Chih Liu
contributor authorChia Lun Chang
contributor authorChao Chi Chung
contributor authorYan Hao Chen
contributor authorTe Yuan Chung
contributor authorCheng Yi Liu
date accessioned2020-03-13T00:07:55Z
date available2020-03-13T00:07:55Z
date issued2014
identifier issn1041-1135
identifier other6828707.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1135523?show=full
formatgeneral
languageEnglish
publisherIEEE
titleInternal Quantum Efficiency Enhancement by Relieving Compressive Stress of GaN-Based LED
typeJournal Paper
contenttypeMetadata Only
identifier padid8317037
subject keywordsRaman spectra
subject keywordseutectic alloys
subject keywordsgold alloys
subject keywordslight emitting diodes
subject keywordsmicroassembling
subject keywordsphotoluminescence
subject keywordspiezoelectric devices
subject keywordspiezoelectric semiconductors
subject keywordspiezoelectricity
subject keywordsquantum well devices
subject keywordssemiconductor quantum wells
subject keywordssolders
subject keywordstin alloys
subject keywordsGaN-AuSn
subject keywordsGaN-based LED
subject keywordsRaman spectra
subject keywordsSi
subject keywordscompressive stress
subject keywordscurrent input
subject keywordsdie-attached LED chips
subject keywordsdie-attaching GaN-based light-emitting diodes
subject keywordseutectic die-attachment
subject keywordseutectic solder
subject keywordsexternal quantum efficiency
subject keywordsinternal quantum efficiency enha
identifier doi10.1109/LPT.2014.2329857
journal titlePhotonics Technology Letters, IEEE
journal volume26
journal issue18
filesize328138
citations0


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