Temperature Sensor Front End in SOI CMOS Operating up to 250 <inline-formula> <img src="/images/tex/762.gif" alt="^{\\circ}\\hbox {C}"> </inline-formula>
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: 2014شناسه الکترونیک: 10.1109/TCSII.2014.2327316
کلیدواژه(گان): elemental semiconductors,reference circuits,silicon,silicon-on-insulator,temperature sensors,SOI CMOS,Si,TC,complementary-to-absolute-temperature voltage,extraction circuit elimination,extraction principle,nMOS compensation,nonlinear temperature-dependent mobility,pMOS compensation,partially depleted silicon-on-insulator CMOS process,size 1 mum,temperature -25 degC to 250 degC,temperature sensor front end,threshold-voltage temperature coefficient,voltage reference,CMOS integr
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Temperature Sensor Front End in SOI CMOS Operating up to 250 <inline-formula> <img src="/images/tex/762.gif" alt="^{\\circ}\\hbox {C}"> </inline-formula>
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| contributor author | Pathrose, Jerrin | |
| contributor author | Lei Zou | |
| contributor author | Chai, Kevin T. C. | |
| contributor author | Minkyu Je | |
| contributor author | Yong Ping Xu | |
| date accessioned | 2020-03-13T00:05:48Z | |
| date available | 2020-03-13T00:05:48Z | |
| date issued | 2014 | |
| identifier issn | 1549-7747 | |
| identifier other | 6823103.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1134268 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Temperature Sensor Front End in SOI CMOS Operating up to 250 <inline-formula> <img src="/images/tex/762.gif" alt="^{\\circ}\\hbox {C}"> </inline-formula> | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8315560 | |
| subject keywords | elemental semiconductors | |
| subject keywords | reference circuits | |
| subject keywords | silicon | |
| subject keywords | silicon-on-insulator | |
| subject keywords | temperature sensors | |
| subject keywords | SOI CMOS | |
| subject keywords | Si | |
| subject keywords | TC | |
| subject keywords | complementary-to-absolute-temperature voltage | |
| subject keywords | extraction circuit elimination | |
| subject keywords | extraction principle | |
| subject keywords | nMOS compensation | |
| subject keywords | nonlinear temperature-dependent mobility | |
| subject keywords | pMOS compensation | |
| subject keywords | partially depleted silicon-on-insulator CMOS process | |
| subject keywords | size 1 mum | |
| subject keywords | temperature -25 degC to 250 degC | |
| subject keywords | temperature sensor front end | |
| subject keywords | threshold-voltage temperature coefficient | |
| subject keywords | voltage reference | |
| subject keywords | CMOS integr | |
| identifier doi | 10.1109/TCSII.2014.2327316 | |
| journal title | Circuits and Systems II: Express Briefs, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 7 | |
| filesize | 792410 | |
| citations | 1 |