Vertical-Injection GaN-Based Light-Emitting Diodes Fabricated With Schottky-Contact Current Blocking Layer
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سال
: 2014شناسه الکترونیک: 10.1109/TED.2014.2321160
کلیدواژه(گان): III-V semiconductors,Schottky barriers,gallium compounds,light emitting diodes,semiconductor device manufacture,wide band gap semiconductors,Ar,GaN,LED,Schottky-contact current blocking layer,light-emitting diodes,secondary ion mass spectroscopy,Gallium nitride,Light emitting diodes,Nickel,Optical device fabrication,Plasmas,Schottky barriers,Surface treatment,Current blocking layer (CBL),light-emitting diode (LED),light-emitting diode (LED).
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Vertical-Injection GaN-Based Light-Emitting Diodes Fabricated With Schottky-Contact Current Blocking Layer
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contributor author | Munsik Oh | |
contributor author | Hyunsoo Kim | |
date accessioned | 2020-03-13T00:03:57Z | |
date available | 2020-03-13T00:03:57Z | |
date issued | 2014 | |
identifier issn | 0018-9383 | |
identifier other | 6817570.pdf | |
identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1133137 | |
format | general | |
language | English | |
publisher | IEEE | |
title | Vertical-Injection GaN-Based Light-Emitting Diodes Fabricated With Schottky-Contact Current Blocking Layer | |
type | Journal Paper | |
contenttype | Metadata Only | |
identifier padid | 8314253 | |
subject keywords | III-V semiconductors | |
subject keywords | Schottky barriers | |
subject keywords | gallium compounds | |
subject keywords | light emitting diodes | |
subject keywords | semiconductor device manufacture | |
subject keywords | wide band gap semiconductors | |
subject keywords | Ar | |
subject keywords | GaN | |
subject keywords | LED | |
subject keywords | Schottky-contact current blocking layer | |
subject keywords | light-emitting diodes | |
subject keywords | secondary ion mass spectroscopy | |
subject keywords | Gallium nitride | |
subject keywords | Light emitting diodes | |
subject keywords | Nickel | |
subject keywords | Optical device fabrication | |
subject keywords | Plasmas | |
subject keywords | Schottky barriers | |
subject keywords | Surface treatment | |
subject keywords | Current blocking layer (CBL) | |
subject keywords | light-emitting diode (LED) | |
subject keywords | light-emitting diode (LED). | |
identifier doi | 10.1109/TED.2014.2321160 | |
journal title | Electron Devices, IEEE Transactions on | |
journal volume | 61 | |
journal issue | 7 | |
filesize | 913094 | |
citations | 0 |