Pd Schottky Contacts on Sol–Gel Derived ZnO Thin Films With Nearly Ideal Richardson Constant
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سال
: 2014شناسه الکترونیک: 10.1109/LED.2014.2319578
کلیدواژه(گان): II-VI semiconductors,Schottky barriers,Schottky diodes,elemental semiconductors,palladium,silicon,sol-gel processing,thin film devices,wide band gap semiconductors,zinc compounds,Gaussian distributed barrier height,I-V characteristics,Pd-ZnO,Schottky contacts,Si,electron affinity,electron volt energy 1.42 eV,electron volt energy 3.7 eV,electron volt energy 5.12 eV,n-Si (100) substrates,nearly ideal Richardson constant,sol-gel method,standard deviation,temperature-dependent
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Pd Schottky Contacts on Sol–Gel Derived ZnO Thin Films With Nearly Ideal Richardson Constant
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| contributor author | Yadav, A.B. | |
| contributor author | Pandey, Ashutosh | |
| contributor author | Jit, S. | |
| date accessioned | 2020-03-13T00:02:27Z | |
| date available | 2020-03-13T00:02:27Z | |
| date issued | 2014 | |
| identifier issn | 0741-3106 | |
| identifier other | 6811230.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1132245 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Pd Schottky Contacts on Sol–Gel Derived ZnO Thin Films With Nearly Ideal Richardson Constant | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8313195 | |
| subject keywords | II-VI semiconductors | |
| subject keywords | Schottky barriers | |
| subject keywords | Schottky diodes | |
| subject keywords | elemental semiconductors | |
| subject keywords | palladium | |
| subject keywords | silicon | |
| subject keywords | sol-gel processing | |
| subject keywords | thin film devices | |
| subject keywords | wide band gap semiconductors | |
| subject keywords | zinc compounds | |
| subject keywords | Gaussian distributed barrier height | |
| subject keywords | I-V characteristics | |
| subject keywords | Pd-ZnO | |
| subject keywords | Schottky contacts | |
| subject keywords | Si | |
| subject keywords | electron affinity | |
| subject keywords | electron volt energy 1.42 eV | |
| subject keywords | electron volt energy 3.7 eV | |
| subject keywords | electron volt energy 5.12 eV | |
| subject keywords | n-Si (100) substrates | |
| subject keywords | nearly ideal Richardson constant | |
| subject keywords | sol-gel method | |
| subject keywords | standard deviation | |
| subject keywords | temperature-dependent | |
| identifier doi | 10.1109/LED.2014.2319578 | |
| journal title | Electron Device Letters, IEEE | |
| journal volume | 35 | |
| journal issue | 7 | |
| filesize | 857868 | |
| citations | 0 |