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contributor authorBaine, P.
contributor authorMontgomery, John H.
contributor authorArmstrong, B. Mervyn
contributor authorGamble, Harold S.
contributor authorHarrington, Sarah J.
contributor authorNigrin, Sydney
contributor authorWilson, Richard
contributor authorOo, Kean B.
contributor authorArmstrong, Alastair G.
contributor authorSuder, Suli
date accessioned2020-03-13T00:01:51Z
date available2020-03-13T00:01:51Z
date issued2014
identifier issn0018-9383
identifier other6809995.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1131905?show=full
formatgeneral
languageEnglish
publisherIEEE
titleImproved Thermal Performance of SOI Using a Compound Buried Layer
typeJournal Paper
contenttypeMetadata Only
identifier padid8312801
subject keywordsburied layers
subject keywordspower bipolar transistors
subject keywordssilicon compounds
subject keywordssilicon-on-insulator
subject keywordsthermal conductivity
subject keywordsthermal resistance
subject keywordsSOI
subject keywordsSi
subject keywordsSiO<
subject keywordssub>
subject keywords2<
subject keywords/sub>
subject keywordscompound buried layer
subject keywordsdielectric layer
subject keywordsequivalent oxide thickness
subject keywordslateral heat flow
subject keywordspolycrystalline silicon
subject keywordspower bipolar transistors
subject keywordssize 13.5 mum
subject keywordsthermal conductivity
subject keywordsthermal performance
subject keywordsthermal resistance
subject keywordsundoped polysilicon
subject keywordsConductivity
subject keywordsSilicon
subject keywordsSubstrates
subject keywordsThermal conductivity
subject keywordsThermal resistance
subject keywordsTransistors
subject keywordsCompound
identifier doi10.1109/TED.2014.2318832
journal titleElectron Devices, IEEE Transactions on
journal volume61
journal issue6
filesize1569022
citations0


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