Single-chip InGanN green light-emitting diodes with 3W optical output power
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سال
: 2014شناسه الکترونیک: 10.1049/el.2013.2980
کلیدواژه(گان): III-V semiconductors,indium compounds,light emitting diodes,wide band gap semiconductors,InGaN,LED,chip dimensions,commercial wafers,current 500 mA,direct operation conditions,electrical characteristics,external quantum efficiency,forward voltage,high-power single-chip green light-emitting diode,injection current,optical characteristics,optical output power,power 3 W,power 41.5 W,single-chip InGaN green light-emitting diodes,voltage 83 V
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Single-chip InGanN green light-emitting diodes with 3W optical output power
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contributor author | Wei Wang | |
contributor author | Yong Cai | |
contributor author | Juan Hong Huang | |
contributor author | Wei Huang | |
contributor author | Haiou Li | |
contributor author | Xin Lin | |
contributor author | Ximing Zhou | |
contributor author | Baosun Zhang | |
date accessioned | 2020-03-12T23:53:57Z | |
date available | 2020-03-12T23:53:57Z | |
date issued | 2014 | |
identifier issn | 0013-5194 | |
identifier other | 6777236.pdf | |
identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1127307 | |
format | general | |
language | English | |
publisher | IET | |
title | Single-chip InGanN green light-emitting diodes with 3W optical output power | |
type | Journal Paper | |
contenttype | Metadata Only | |
identifier padid | 8307247 | |
subject keywords | III-V semiconductors | |
subject keywords | indium compounds | |
subject keywords | light emitting diodes | |
subject keywords | wide band gap semiconductors | |
subject keywords | InGaN | |
subject keywords | LED | |
subject keywords | chip dimensions | |
subject keywords | commercial wafers | |
subject keywords | current 500 mA | |
subject keywords | direct operation conditions | |
subject keywords | electrical characteristics | |
subject keywords | external quantum efficiency | |
subject keywords | forward voltage | |
subject keywords | high-power single-chip green light-emitting diode | |
subject keywords | injection current | |
subject keywords | optical characteristics | |
subject keywords | optical output power | |
subject keywords | power 3 W | |
subject keywords | power 41.5 W | |
subject keywords | single-chip InGaN green light-emitting diodes | |
subject keywords | voltage 83 V | |
identifier doi | 10.1049/el.2013.2980 | |
journal title | Electronics Letters | |
journal volume | 50 | |
journal issue | 6 | |
filesize | 405011 | |
citations | 0 |