Recovery of Electrical Characteristics of Au/n-Si Schottky Junction Under <inline-formula> <img src="/images/tex/21647.gif" alt="{}^{60}\\hbox {Co}"> </inline-formula> Gamma Irradiation
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سال
: 2014شناسه الکترونیک: 10.1109/TDMR.2014.2312753
کلیدواژه(گان): Schottky barriers,capacitance measurement,cobalt,electric current measurement,electron transport theory,elemental semiconductors,gamma-rays,gold,recovery,semiconductor junctions,silicon,voltage measurement,60Co gamma rays,<,sup>,60<,/sup>,Co,Au-Si,Au-n-Si metal-semiconductor Schottky barrier junction,C-V measurements,I-V measurements,Schottky interface,annealing,capacitance-voltage measurements,current-voltage measurements,electrical transport characteristics,elect
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آمار بازدید
Recovery of Electrical Characteristics of Au/n-Si Schottky Junction Under <inline-formula> <img src="/images/tex/21647.gif" alt="{}^{60}\\hbox {Co}"> </inline-formula> Gamma Irradiation
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| contributor author | Verma, Shalini | |
| contributor author | Praveen, Kumsi C. | |
| contributor author | Bobby, Achamma | |
| contributor author | Kanjilal, D. | |
| date accessioned | 2020-03-12T23:53:38Z | |
| date available | 2020-03-12T23:53:38Z | |
| date issued | 2014 | |
| identifier issn | 1530-4388 | |
| identifier other | 6776434.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1127121 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Recovery of Electrical Characteristics of Au/n-Si Schottky Junction Under <inline-formula> <img src="/images/tex/21647.gif" alt="{}^{60}\\hbox {Co}"> </inline-formula> Gamma Irradiation | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8307048 | |
| subject keywords | Schottky barriers | |
| subject keywords | capacitance measurement | |
| subject keywords | cobalt | |
| subject keywords | electric current measurement | |
| subject keywords | electron transport theory | |
| subject keywords | elemental semiconductors | |
| subject keywords | gamma-rays | |
| subject keywords | gold | |
| subject keywords | recovery | |
| subject keywords | semiconductor junctions | |
| subject keywords | silicon | |
| subject keywords | voltage measurement | |
| subject keywords | 60Co gamma rays | |
| subject keywords | < | |
| subject keywords | sup> | |
| subject keywords | 60< | |
| subject keywords | /sup> | |
| subject keywords | Co | |
| subject keywords | Au-Si | |
| subject keywords | Au-n-Si metal-semiconductor Schottky barrier junction | |
| subject keywords | C-V measurements | |
| subject keywords | I-V measurements | |
| subject keywords | Schottky interface | |
| subject keywords | annealing | |
| subject keywords | capacitance-voltage measurements | |
| subject keywords | current-voltage measurements | |
| subject keywords | electrical transport characteristics | |
| subject keywords | elect | |
| identifier doi | 10.1109/TDMR.2014.2312753 | |
| journal title | Device and Materials Reliability, IEEE Transactions on | |
| journal volume | 14 | |
| journal issue | 2 | |
| filesize | 525113 | |
| citations | 0 |