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A novel metallic complex reaction etching for transition metal and magnetic material by low-temperature and damage-free neutral beam process for non-volatile MRAM device applications

Author:
Xun Gu , Kikuchi, Y. , Nozawa, T. , Samukawa, S.
Publisher:
IEEE
Year
: 2014
DOI: 10.1109/SMC.2014.6974393
URI: http://libsearch.um.ac.ir:80/fum/handle/fum/1112904
Keyword(s): Conferences,Cybernetics,Demand Response,cement plant,load shift,modeling and simulation
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    A novel metallic complex reaction etching for transition metal and magnetic material by low-temperature and damage-free neutral beam process for non-volatile MRAM device applications

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contributor authorXun Gu , Kikuchi, Y. , Nozawa, T. , Samukawa, S.
date accessioned2020-03-12T23:28:20Z
date available2020-03-12T23:28:20Z
date issued2014
identifier other6894362.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1112904
formatgeneral
languageEnglish
publisherIEEE
titleA novel metallic complex reaction etching for transition metal and magnetic material by low-temperature and damage-free neutral beam process for non-volatile MRAM device applications
typeConference Paper
contenttypeMetadata Only
identifier padid8281883
subject keywordsConferences
subject keywordsCybernetics
subject keywordsDemand Response
subject keywordscement plant
subject keywordsload shift
subject keywordsmodeling and simulation
identifier doi10.1109/SMC.2014.6974393
journal titleLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
filesize822156
citations0
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