Analysis of the factors influencing the attitude determination accuracy based on orthogonal experiment
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: 2014DOI: 10.1109/LTB-3D.2014.6886189
Keyword(s): III-V semiconductors,n electrical resistivity,n elemental semiconductors,n gallium arsenide,n germanium,n semiconductor diodes,n semiconductor heterojunctions,n solar cells,n surface treatment,n three-dimensional integrated circuits,n wafer bonding,n Ge-GaAs,n I-V characteristic,n TEM observation,n amorphous layer,n bonded interface,n diode-like properties,n directly bonded wafers,n electrical resistance,n high efficiency III-V multijuncti
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Analysis of the factors influencing the attitude determination accuracy based on orthogonal experiment
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| contributor author | Rao, Jin | |
| contributor author | Qiu, Hongzhuan | |
| contributor author | Xiong, Kai | |
| date accessioned | 2020-03-12T22:24:07Z | |
| date available | 2020-03-12T22:24:07Z | |
| date issued | 2014 | |
| identifier other | 7007399.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1081762?locale-attribute=en | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Analysis of the factors influencing the attitude determination accuracy based on orthogonal experiment | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8218287 | |
| subject keywords | III-V semiconductors | |
| subject keywords | n electrical resistivity | |
| subject keywords | n elemental semiconductors | |
| subject keywords | n gallium arsenide | |
| subject keywords | n germanium | |
| subject keywords | n semiconductor diodes | |
| subject keywords | n semiconductor heterojunctions | |
| subject keywords | n solar cells | |
| subject keywords | n surface treatment | |
| subject keywords | n three-dimensional integrated circuits | |
| subject keywords | n wafer bonding | |
| subject keywords | n Ge-GaAs | |
| subject keywords | n I-V characteristic | |
| subject keywords | n TEM observation | |
| subject keywords | n amorphous layer | |
| subject keywords | n bonded interface | |
| subject keywords | n diode-like properties | |
| subject keywords | n directly bonded wafers | |
| subject keywords | n electrical resistance | |
| subject keywords | n high efficiency III-V multijuncti | |
| identifier doi | 10.1109/LTB-3D.2014.6886189 | |
| journal title | uidance, Navigation and Control Conference (CGNCC), 2014 IEEE Chinese | |
| filesize | 118392 | |
| citations | 0 |