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A Non-intrusive Approach for 2D Platform Game Design Analysis Based on Provenance Data Extracted from Game Streaming

Author:
Jacob, Lidson Barbosa
,
Kohwalter, Troy C.
,
Machado, Alex F.V.
,
Clua, Esteban W.G.
,
Oliveira, Daniel de
Publisher:
IEEE
Year
: 2014
DOI: 10.1109/COMPEL.2014.6877124
URI: http://libsearch.um.ac.ir:80/fum/handle/fum/1076916
Keyword(s): heat sinks,n invertors,n modulation,n power MOSFET,n rectification,n silicon compounds,n switching convertors,n wide band gap semiconductors,n 3-level ANPC grid-connected inverter,n SiC,n active rectification,n frequency 10 kHz to 80 kHz,n heat sink temperature conditions,n performance analysis,n power MOSFET,n three-level active neutral point clamped inverter,n voltage 230 V,n voltage 650 V,n voltage 700 V,n Heating,n Insulated gate bi
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    A Non-intrusive Approach for 2D Platform Game Design Analysis Based on Provenance Data Extracted from Game Streaming

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contributor authorJacob, Lidson Barbosa
contributor authorKohwalter, Troy C.
contributor authorMachado, Alex F.V.
contributor authorClua, Esteban W.G.
contributor authorOliveira, Daniel de
date accessioned2020-03-12T22:15:51Z
date available2020-03-12T22:15:51Z
date issued2014
identifier other7000031.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1076916
formatgeneral
languageEnglish
publisherIEEE
titleA Non-intrusive Approach for 2D Platform Game Design Analysis Based on Provenance Data Extracted from Game Streaming
typeConference Paper
contenttypeMetadata Only
identifier padid8213149
subject keywordsheat sinks
subject keywordsn invertors
subject keywordsn modulation
subject keywordsn power MOSFET
subject keywordsn rectification
subject keywordsn silicon compounds
subject keywordsn switching convertors
subject keywordsn wide band gap semiconductors
subject keywordsn 3-level ANPC grid-connected inverter
subject keywordsn SiC
subject keywordsn active rectification
subject keywordsn frequency 10 kHz to 80 kHz
subject keywordsn heat sink temperature conditions
subject keywordsn performance analysis
subject keywordsn power MOSFET
subject keywordsn three-level active neutral point clamped inverter
subject keywordsn voltage 230 V
subject keywordsn voltage 650 V
subject keywordsn voltage 700 V
subject keywordsn Heating
subject keywordsn Insulated gate bi
identifier doi10.1109/COMPEL.2014.6877124
journal titleomputer Games and Digital Entertainment (SBGAMES), 2014 Brazilian Symposium on
filesize1342026
citations0
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