A coarse-to-fine approach to robust 3D facial landmarking via curvature analysis and Active Normal Model
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سال
: 2014شناسه الکترونیک: 10.1109/DRC.2014.6872367
کلیدواژه(گان): Schottky barriers,n aluminium compounds,n field effect transistors,n hole mobility,n Al<,sub>,2<,/sub>,O<,sub>,3<,/sub>,n ambipolar phosphorene field-effect transistors,n dielectric capping,n effective Schottky barrier height,n hole field-effect mobility,n on-off ratio,n top dielectric capping,n transistor polarity,n well-behaved back-gate few-layer phosphorene transistor,n Aluminum oxide,n Charge carrier processes,n Dielectrics
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A coarse-to-fine approach to robust 3D facial landmarking via curvature analysis and Active Normal Model
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| contributor author | Jia Sun | |
| contributor author | Huang, Di | |
| contributor author | Yunhong Wang | |
| contributor author | Chen, Liming | |
| date accessioned | 2020-03-12T22:09:57Z | |
| date available | 2020-03-12T22:09:57Z | |
| date issued | 2014 | |
| identifier other | 6996267.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1073747 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | A coarse-to-fine approach to robust 3D facial landmarking via curvature analysis and Active Normal Model | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8209871 | |
| subject keywords | Schottky barriers | |
| subject keywords | n aluminium compounds | |
| subject keywords | n field effect transistors | |
| subject keywords | n hole mobility | |
| subject keywords | n Al< | |
| subject keywords | sub> | |
| subject keywords | 2< | |
| subject keywords | /sub> | |
| subject keywords | O< | |
| subject keywords | sub> | |
| subject keywords | 3< | |
| subject keywords | /sub> | |
| subject keywords | n ambipolar phosphorene field-effect transistors | |
| subject keywords | n dielectric capping | |
| subject keywords | n effective Schottky barrier height | |
| subject keywords | n hole field-effect mobility | |
| subject keywords | n on-off ratio | |
| subject keywords | n top dielectric capping | |
| subject keywords | n transistor polarity | |
| subject keywords | n well-behaved back-gate few-layer phosphorene transistor | |
| subject keywords | n Aluminum oxide | |
| subject keywords | n Charge carrier processes | |
| subject keywords | n Dielectrics | |
| identifier doi | 10.1109/DRC.2014.6872367 | |
| journal title | iometrics (IJCB), 2014 IEEE International Joint Conference on | |
| filesize | 9869960 | |
| citations | 0 |