Information flow model for process bus network in smart substation
Publisher:
Year
: 2014DOI: 10.1109/IPEC.2014.6869990
Keyword(s): insulated gate bipolar transistors,n p-i-n diodes,n power semiconductor diodes,n semiconductor device packaging,n silicon compounds,n wide band gap semiconductors,n DBC substrate,n PiN diode,n Si<,sub>,3<,/sub>,N<,sub>,4<,/sub>,n SiC,n differential specific on-resistance,n n-channel IGBT,n nano-tech resin,n p-channel IGBT,n package technology,n ultrahigh voltage SiC power device,n voltage 13 kV,n voltage 15 kV,n voltage 16 kV
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Information flow model for process bus network in smart substation
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| contributor author | Junxiong Zou | |
| contributor author | Yanxu Zhang | |
| contributor author | Chengqiao Huang | |
| contributor author | Zexiang Cai | |
| contributor author | Xiaohua Li | |
| contributor author | Ruiwen He | |
| date accessioned | 2020-03-12T22:07:36Z | |
| date available | 2020-03-12T22:07:36Z | |
| date issued | 2014 | |
| identifier other | 6993965.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1072347 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Information flow model for process bus network in smart substation | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8208432 | |
| subject keywords | insulated gate bipolar transistors | |
| subject keywords | n p-i-n diodes | |
| subject keywords | n power semiconductor diodes | |
| subject keywords | n semiconductor device packaging | |
| subject keywords | n silicon compounds | |
| subject keywords | n wide band gap semiconductors | |
| subject keywords | n DBC substrate | |
| subject keywords | n PiN diode | |
| subject keywords | n Si< | |
| subject keywords | sub> | |
| subject keywords | 3< | |
| subject keywords | /sub> | |
| subject keywords | N< | |
| subject keywords | sub> | |
| subject keywords | 4< | |
| subject keywords | /sub> | |
| subject keywords | n SiC | |
| subject keywords | n differential specific on-resistance | |
| subject keywords | n n-channel IGBT | |
| subject keywords | n nano-tech resin | |
| subject keywords | n p-channel IGBT | |
| subject keywords | n package technology | |
| subject keywords | n ultrahigh voltage SiC power device | |
| subject keywords | n voltage 13 kV | |
| subject keywords | n voltage 15 kV | |
| subject keywords | n voltage 16 kV | |
| identifier doi | 10.1109/IPEC.2014.6869990 | |
| journal title | ower System Technology (POWERCON), 2014 International Conference on | |
| filesize | 702591 | |
| citations | 0 |