A continuous toroidal winding SRM with 6 or 12 switch DC converter
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سال
: 2014شناسه الکترونیک: 10.1109/APEC.2014.6803305
کلیدواژه(گان): electronics packaging,n gallium compounds,n high electron mobility transistors,n inductors,n critical common-source inductor elimination,n hard-switching turn-off condition,n hard-switching turn-on condition,n high-electron-mobility transistors,n high-voltage cascode gallium nitride HEMT,n internal parasitic ringing,n package parasitics,n stack-die package,n turn-on loss,n Gallium nitride,n HEMTs,n Inductance,n Inductors,n MOSFET,n Silicon
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A continuous toroidal winding SRM with 6 or 12 switch DC converter
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contributor author | Marlow, R. | |
contributor author | Schofield, N. | |
contributor author | Emadi, A. | |
date accessioned | 2020-03-12T21:41:48Z | |
date available | 2020-03-12T21:41:48Z | |
date issued | 2014 | |
identifier other | 6953921.pdf | |
identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1057274 | |
format | general | |
language | English | |
publisher | IEEE | |
title | A continuous toroidal winding SRM with 6 or 12 switch DC converter | |
type | Conference Paper | |
contenttype | Metadata Only | |
identifier padid | 8188456 | |
subject keywords | electronics packaging | |
subject keywords | n gallium compounds | |
subject keywords | n high electron mobility transistors | |
subject keywords | n inductors | |
subject keywords | n critical common-source inductor elimination | |
subject keywords | n hard-switching turn-off condition | |
subject keywords | n hard-switching turn-on condition | |
subject keywords | n high-electron-mobility transistors | |
subject keywords | n high-voltage cascode gallium nitride HEMT | |
subject keywords | n internal parasitic ringing | |
subject keywords | n package parasitics | |
subject keywords | n stack-die package | |
subject keywords | n turn-on loss | |
subject keywords | n Gallium nitride | |
subject keywords | n HEMTs | |
subject keywords | n Inductance | |
subject keywords | n Inductors | |
subject keywords | n MOSFET | |
subject keywords | n Silicon | |
identifier doi | 10.1109/APEC.2014.6803305 | |
journal title | nergy Conversion Congress and Exposition (ECCE), 2014 IEEE | |
filesize | 2058454 | |
citations | 0 |