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Developing time-frequency features for prediction of the recurrence of atrial fibrillation after electrical cardioversion therapy

Author:
Sterling, M.
,
Huang, D.T.
,
Ghoraani, B.
Publisher:
IEEE
Year
: 2014
DOI: 10.1109/ASPDAC.2014.6742884
URI: http://libsearch.um.ac.ir:80/fum/handle/fum/1050941
Keyword(s): CMOS integrated circuits,n MOSFET,n semiconductor device models,n table lookup,n CSM lookup tables,n FinFET devices,n ON/OFF current ratio,n SSTA,n channel control,n independent gate control,n near threshold voltage regime,n planar CMOS devices,n process variation,n semi-analytical current source modeling,n statistical static timing analysis,n sub-threshold slope,n subthreshold voltage regime,n transient noise,n Capacitance,n FinFETs
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    Developing time-frequency features for prediction of the recurrence of atrial fibrillation after electrical cardioversion therapy

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contributor authorSterling, M.
contributor authorHuang, D.T.
contributor authorGhoraani, B.
date accessioned2020-03-12T21:28:56Z
date available2020-03-12T21:28:56Z
date issued2014
identifier other6944871.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1050941
formatgeneral
languageEnglish
publisherIEEE
titleDeveloping time-frequency features for prediction of the recurrence of atrial fibrillation after electrical cardioversion therapy
typeConference Paper
contenttypeMetadata Only
identifier padid8180891
subject keywordsCMOS integrated circuits
subject keywordsn MOSFET
subject keywordsn semiconductor device models
subject keywordsn table lookup
subject keywordsn CSM lookup tables
subject keywordsn FinFET devices
subject keywordsn ON/OFF current ratio
subject keywordsn SSTA
subject keywordsn channel control
subject keywordsn independent gate control
subject keywordsn near threshold voltage regime
subject keywordsn planar CMOS devices
subject keywordsn process variation
subject keywordsn semi-analytical current source modeling
subject keywordsn statistical static timing analysis
subject keywordsn sub-threshold slope
subject keywordsn subthreshold voltage regime
subject keywordsn transient noise
subject keywordsn Capacitance
subject keywordsn FinFETs
identifier doi10.1109/ASPDAC.2014.6742884
journal titlengineering in Medicine and Biology Society (EMBC), 2014 36th Annual International Conference of the
filesize998686
citations0
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