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Simulation of 3D FinFET doping profiles introduced by ion implantation and the impact on device performance

contributor authorLiping Wang
contributor authorBrown, A.
contributor authorCheng, B.
contributor authorAsenov, A.
date accessioned2020-03-12T21:23:28Z
date available2020-03-12T21:23:28Z
date issued2014
identifier other6940008.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1047431?show=full
formatgeneral
languageEnglish
publisherIEEE
titleSimulation of 3D FinFET doping profiles introduced by ion implantation and the impact on device performance
typeConference Paper
contenttypeMetadata Only
identifier padid8176575
subject keywordsHeuristic algorithms
subject keywordsInterference
subject keywordsMacrocell networks
subject keywordsMobile computing
subject keywordsSimulation
subject keywordsWireless communication
subject keywordscellular network
subject keywordsmobile small cell
subject keywordssmall cell deployment
identifier doi10.1109/GLOCOM.2014.7037574
journal titleon Implantation Technology (IIT), 2014 20th International Conference on
filesize1121229
citations1


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